Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 68 for “"transconductance"”.
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Low-voltage organic transistors with high transconductance
… organic thin-film transistors with high transconductance. This was achieved by employing ultra-thin bi-layer gate dielectric consisting of aluminium oxide (AlOx) and a self-assembled monolayer of octadecyl phosphonic acid (C18PA) and by increasing the channel width of the transistors …
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Analysis and design of high-transconductance RF mosfet voltage to-current converters
… is concerned with analysis and design of "HighTransconductance RF MOSFET Voltage-to-Current (V-I) Converters". Various V-I converter circuits published in the past have been reviewed by the author in order to understand the different techniques employed to improve transconductance (Gt), linear …
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A mechanical analogy and graphical method for explaining negative transconductance in crossed electrostatic and magnetic fields
… employed to explain the phenomena of negative transconductance in crossed fields. To the best of the writer’s knowledge, the graphical method derived in this study is the first method, other than that of conformal mapping, which enables one to plot the path of electrons in crossed fields, and …
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A multisubband self-consistent two-dimensional numerical model for Hemt including intersubband and intrasubband scattering mechanisms in the quantum well
… from the scattering rates; We obtain lower transconductance and unity gain frequency which were overestimated in the previous model. At a gate bias of 0.625 V, we obtained a transconductance of 316 mS/mm, a gate capacitance of 17.68 pF/cm, and a unity-gain frequency of 28.44 GHz. (Abstract …
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Deposition and Characterization of Silicon Nitride/gallium Arsenide Metal Insulator Semiconductor Structures With Heteroepitaxial Interlayers
… This has led to the realization of high transconductance GaAs metal-insulator-semiconductor field-effect transistors (MISFETs) having a maximum transconductance approaching 170 mS/mm.
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Návrh analogových obvodů s nízkým napájecím napětím a nízkým příkonem
… lze začlenit zesilovače typu OTA (operational transconductance amplifier), CCII (second generation current conveyor), FB-CCII (fully-differential second generation current conveyor), FB-DDA (fully-balanced differential difference amplifier), VDTA (voltage differencing transconductance …
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Finite Element Method Modeling Of Advanced Electronic Devices
… time, and the dependence of small signal transconductance and gate capacitance on the frequency, are explored. The validity of the widely used quasi-static approximation is examined. The results show that the quasi-static approximation overestimates the transconductance and gate …
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Modeling of the output and transfer characteristics of graphene field-effect transistors
… Closed expressions for the conductance, transconductance, and saturation voltage are derived. The results are in good agreement with the experimental data of Meric et al. [Nature Nanotechnology, vol. 3, p. 684, 2008] without assuming carrier density-dependent velocity saturation.
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Electrolyte-gated graphene field-effect transistors : modeling and applications
… design such as current-voltage characteristics, transconductance, output resistance, and intrinsic gain. The model can also be used to optimize the design of EGFETs. For example, simulated and experimental results show that avoiding the practice of partial channel passivation enhances the …
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High Density Plasma Etching of Wide Bandgap Semiconductor Materials for Fabricating Novel Devices
… current density as high as 1.31 A/mm, a peak transconductance of 401 mS/mm, an fT of 107 GHz and an f max of 148 GHz were measured on these devices. To the best of the authors' knowledge, this is the highest ever-reported value of gm for AlGaN/GaN HEMTs. Also, an fT of 107 GHz is the highest …
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Designing FET based multiple valued logic circuits
… changing the device threshold and the device transconductance, for these threshold circuits are discussed. A comparative study of these two methods from a theoretical and practical viewpoint is included. Several MOSFET based MVL circuits are developed and an explanation of their operation is …
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Using multiplexers to study the statistics of quantum phenomenon in one-dimensional wires
… the van-Hove model. The 0.7 anomaly shows the transconductance suppression due to the effective electron interactions which are modified by the local density of states (LDOS). At the maximum of LDOS, the interaction strength becomes strongest, resulting in the strongest transconductance …
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Experimental Study and Modeling of the GM-I Dependence of Long-Channel Mosfets
… experimental study and modeling of the current-transconductance dependence of the ALD1106, ALD1107, and CD4007 arrays. The study tests the hypothesis that the I-gm dependence of these 7.8 µm to 10 µm MOSFETs conforms to the Advanced Compact Model (ACM). Results from performed measurements, …
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Fabrication and characterization of AIGaN/GaN HEMTs
… A maximum drain current of 800mA/mm and a peak transconductance of 165mS/mm was achieved with the first HEMT design compared to 500mA/mm and 106mS/mm for the second HEMT design. Long-term heat treatment on the HEMT was found to degrade the surface morphology of the Pd/Au gate but improved the …
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Development of Robust Analog and Mixed-Signal Circuits in the Presence of Process- Voltage-Temperature Variations
… cancellation method for baseband operational transconductance amplifiers is proposed that enables a third-order intermodulation (IM3) improvement of up to 22dB. Fabricated in a 0.13?m CMOS process with 1.2V supply, a transconductance-capacitor lowpass filter with the linearized amplifiers has …
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Quantitative Extraction of Bias Stress Parameters in Thin Film Transistors
… voltage shift, but this assumes that the transconductance is not affected by the bias stress, which is not always the case. To eliminate this problem, a novel small-signal measurement is proposed and demonstrated in this thesis. The essential improvement is that a small signal is …
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Negative bias temperature instability (NBTI) experiment
… As a result, the threshold voltage and transconductance will change. These interface states can be measured to determine the susceptibility to NBTI of the devices. For this purpose, a charge pumping experiment and other On-the-Fly techniques at certain temperatures can provide the …
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Polymer-Supported Bridges for Multi-Finger AlGaN/GaN Heterojunction Field Effect Transistors (HFETs)
… drains, and gates in parallel to maximize transconductance and effective gain while minimizing the current density through each channel. To connect the sources to a common ground, current practice prescribes the fabrication of air bridges above the gates and drains. This practice has the …
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Analog and Digital Circuits in a Complementary Organic TFT Technology on Flexible Substrate
… analog building blocks (i.e., folded-cascode transconductance amplifier, 2-stage OTA, stacked-mirror OTA and switched-capacitor comparator) are also faced since the research on complementary organic analog circuits is still at very beginning and they are essential for enabling the …
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