Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 42 for “"switching characteristics"”.
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Switching characteristics of the varactor-diode parametron
Thesis: M.S., Massachusetts Institute of Technology, Department of Electrical Engineering, 1960
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Orientation dependence of dielectric susceptibilities and switching characteristics in epitaxial ferroelectric thin films
… Although many studies of ferroelectric switching have been undertaken, much remains to be understood about switching in complex domain structures and in devices. In the present work, in order to investigate the low field dielectric response, using a combination of phenomenological …
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Experimental and analytical modeling of the quasi-steady switching characteristics of a monostable fluid amplifier
… of internal dimensional variations on the switching and recovery performance of an or/nor gate are investigated. A large scale experimental model is observed for switch pressure and flow rate, return pressure, and output recovery pressure in relation to variations in wall length, control …
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Methodology for Switching Characterization of Power Devices and Modules
… only the necessary components to provide power switching, the end user has a pre-optimized building block with the flexibility to be used in a large variety of applications. Besides simplifying the design process, power modules should be designed in such a way as to improve the performance of …
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Overview and development of a wide bandgap, high temperature circuit and measurement solution
… overview, measurement practices, and transient switching characteristics have yet to be simply summed up in a single system-design oriented source. As a first step in providing a useful design tool, this thesis provides an overview of high temperature materials, circuit attach methods and …
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Tensile-Strained Ge/InₓGa₁₋ₓAs Heterostructures for Electronic and Photonic Applications
… atomic length scale, fundamental limitations in switching characteristics (such as subthreshold slope, SS, and OFF-state power dissipation) pose key technical challenges moving forward. Novel material innovations and device architectures, such as group IV and III-V materials and tunnel …
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Monte Carlo Simulations on Resistive Switching Memristor Modeling
… and superior scalability have put resistive switching memristors in the spotlight of research. This thesis presents a numerical method to determine the variability in switching that different memristors exhibit. Current-voltage relationships and cyclic voltage sweeps are gathered from …
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IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING
… FOR FLASH MEMORIES DUE TO ITS SUPERIOR CHARACTERISTICS: HIGHER SPEED, BETTER ENDURANCE, MORE SCALABLE DESIGN AND SIMPLER FABRICATION PROCESSES. HOWEVER, DUE TO THE STOCHASTIC NATURE OF SUCH RESISTIVE SWITCHING, A LARGE VARIATION IN THE RESISTANCE OF EACH STATE IS OFTEN OBSERVED FROM …
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Modeling gallium-nitride based high electron Mobility transistors : linking device physics to high voltage and high frequency circuit design
… physics and can describe the non-linear terminal characteristics. Currently available compact models for HEMTs are empirical and hence are lacking in physical description of the device, which becomes a handicap in understanding key device-circuit interactions and in accurate estimation of device …
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High Power High Frequency 3-level NPC Power Conversion System
… for high frequency and high power operation. The switching characteristics for all the commutation loops of 3-level phase leg are evaluated by double pulse tests. The switching performance is optimized for loss and stress tradeoff. A detailed loss model is built for system loss distribution and …
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Pulsed MOSFET based linear transformer driver
… repetitive pulses for effective output requires switching technology which has limitations. From the traditional slow switching gas trigger switches, switching technology has evolved to semiconductors which has led to improved switching characteristics and delivered pulse shapes. One such …
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Vertical gallium nitride power devices on bulk native substrates
… is achieved by increasing the cap layer doping. Switching characteristics are investigated by capacitance measurements. The thesis concludes with the demonstration of spalling off the bulk GaN substrate after device fabrication. Thanks to the substrate spalling technology, the on resistance of …
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Ultra-scaled III-V Vertical Tunneling Transistors
… of high drive current and sub-thermionic switching characteristics has never been achieved. Are we in front of a fundamental barrier? This thesis is dedicated to exploring the limit of TFETs in terms of device scalability, high-current potential, and sharp switching capability. We focus on …
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An experimental investigation of the effects of inlet geometry on the performance of a bistable fluid amplifier
… nozzle from a right angle bend, a bias in the switching characteristics was found. For a fixed supply pressure, the left and the right control pressures differed, which caused the output to be easier to switch toward, or be biased toward, one of the output ports. The power jet velocity profiles …
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Fundamental design principles of novel MEMS based "Landau" switches, sensors, and actuators : Role of electrode geometry and operation regime
… (ii) a switch with hysteresis-free ideal switching characteristics based on the operation in unstable regime, and (iii) a Flexure biosensor that operates at the boundary of the stable and unstable regimes to achieve improved sensitivity and signal-to-noise ratio. In general, we have …
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Transceiver Design for Ultra-Wideband Communications
… generated at the transmitter utilizing the fast-switching characteristics of a step recovery diode. Pulse modulation is accomplished via several stages of RF switches, filters, and amplifiers on a fully designed printed circuit board specifically manufactured for this project. Critical hardware …
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Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors
… transistors (TFETs) benefit from steep switching characteristics due to the quantum-mechanical tunneling injection of carriers from source to channel, rather than by conventional thermionic emission in MOSFETs. TFETs based on group III-V compound semiconductor and Ge heterostructures …
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Study of Magnetization Switching in Coupled Magnetic Nanostructured Systems
… subsequently used to explore the magnetization switching in coupled magnetic systems, like synthetic antiferromagnet (SAF) structures. Magnetoresistive random access memory (MRAM) is an important example of devices where the use of SAF structure is essential. To support the understanding of the …
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Applications modelling of advanced multilayer semiconductor structures - The bulk unipolar devices
… applications. An investigation of the switching characteristics of the Bulk Unipolar Switch (BUS) and various device design parameters using an empirical formula, is presented for Computer-Aided-Design (CAD). The model has been shown to simulate all the critical points on the I/V …
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Tensile-Strained Ge/III-V Heterostructures for Low-Power Nanoelectronic Devices
… source to channel, thereby resulting in steep switching characteristics. Furthermore, narrow bandgap semiconductors, such as germanium (Ge) and InxGa1-xAs, enhance the ON-state current and improve the switching behavior of TFET devices, thus making these materials attractive candidates for …
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