Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 17 of 17 for “"strained silicon"”.
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Fabrication of ultra-thin strained silicon on insulator
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2003.
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Silver nanoparticles and thin films for strained-silicon surface enhanced raman spectroscopy and capacitively-coupled radiofrequency heating
… and thin films dispersed onto nm-thin layers of strained silicon (ɛ-Si) grown on Si1-xGex virtual substrates can be utilised to provide surface enhanced Raman spectroscopy (SERS) of the ɛ-Si layer compared to the bulk Si1-xGex virtual substrate – overcoming the need to use low resolution, …
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SiGe virtual substrate engineering for integration of III-V materials, microelectromechanical systems, and strained silicon MOSFETs with silicon
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2001.
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Measurement of Lattice Strain and Relaxation Effects in Strained Silicon Using X-ray Diffraction and Convergent Beam Electron Diffraction
The semiconductor industry has decreased silicon-based device feature sizes dramatically over the last two decades for improved performance. However, current technology has approached the limit of achievable enhancement via this method. Therefore, other techniques, including introducing stress into …
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Investigations of ultra shallow junction ion implanted biaxial tensile strained silicon by means of X-Ray, Raman and photoacoustic techniques
… independent of MOSFET scaling. Biaxial tensile strained silicon ("-Si), resulting from epitaxial growth of silicon on a Si1!xGex virtual substrate gives rise to enhanced electron mobilities and, for certain dopants, increased electrical activation. For these reasons it is the material of …
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Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm
… (UTB) n-MOSFETs fabricated on Ge-free 30% strained-Si directly on insulator (SSDOI) is mapped as the body thickness is scaled. Effective mobility and device body thickness were extracted using current-voltage and gate-to-channel capacitance-voltage measurements as well as cross section …
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Monte Carlo Simulation of Silicon Devices Including Quantum Correction and Strain
… focus of this work is the generalization of a silicon full-band Monte Carlo model to include silicon-based materials. A flexible and efficient device simulator is developed that is capable of introducing an arbitrary number, location, and grading of silicon-based material regions in a 2-D …
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Transport enhancement techniques for nanoscale MOSFETs
… velocity beyond what is achieved with uniaxially strained silicon, along with dramatic reduction in the device parasitics. Such innovations are needed as early as the 32-nm node to avoid the otherwise counter-scaling of the performance. The prospects and limitations of various approaches that are …
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Second order nonlinearities in silicon photonics
… thesis, second order optical nonlinearities in silicon waveguides are studied. At the beginning, the strained silicon platform is investigated in detail. In recent years, second order nonlinearities have been demonstrated on this platform. However, the origin of these nonlinearities was not …
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Theoretical study of the molecular processes occurring during the growth of Silicon on Si(100) and SixGe1-x/Si(100)
… the processes occurring on the surface of pure, strained silicon(100)-2??1 as well as silicon-germanium during the growth of silicon by gas-source molecular beam epitaxy (GSMBE). First-principles calculations were mainly used in this work. The surface processes of interest include the initial …
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Generation, manipulation and detection of NIR and MIR entangled photon pairs
… world into integrated photonics by using the silicon platform and, therefore, permitting the integration of quantum photonics with electronics. The vision was to have low cost and mass manufacturable integrated quantum photonic circuits for a variety of different applications in quantum …
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Lightwave circuits for integrated Silicon Photonics
… and technological advancements in integrated silicon photonics circuits aimed at developing an All-On-Chip device for quantum photonics experiments. The work has been carried out within the framework of project SiQuro, where the Silicon-On-Insulator platform is chosen to integrate all the …
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Strain-balanced silicon-germanium materials for near IR photodetection in silicon-based optical interconnects
Strain-balanced silicon-germanium superlattices grown on high quality compositionally graded buffers, or virtual substrates. make a complete range of alloy composition and biaxial strain combinations accessible. This structure is a unique way to achieve high quantum efficiency near IR …
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MOSFET channel engineering using strained Si and strained Ge grown on SiGe virtual substrates
… channel materials such as germanium and strained silicon ([epsilon]-Si) is increasingly being considered as a method for improving the performance of MOSFETs. While [epsilon]-Si grown on relaxed Si[sub]l-x Ge[sub]x (i.e. single-channel heterostructure) is drawing closer to widespread …
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Microstructural Modification in Nanocrystalline Silicon Due to Selective Charge Injection: A Current-sensing Atomic Force Microscopy Study
… ability to deposit hydrogenated nanocrystalline silicon (nc-Si:H) on low-cost, flexible substrates over large areas makes it an attractive option for large scale production of solar cells. Nc-Si:H has also shown promise as a replacement for amorphous silicon in thin film transistors in large area …
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Quantum Computation With Electron Spins of Phosphorous Donors in Silicon
… attractive implementation proposals are using silicon-based materials, which have the advantage of borrowing the existing ingenuity and resources accumulated during the development of modern microelectronics. In this dissertation we investigate several theoretical aspects of a silicon- based …
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Raman spectroscopy: from ferroelastic domain identification to strain tuning
… proposed for some materials such as BiFeO3 or strained Si. Raman spectroscopy was also used for understanding temperature induced phase transitions or orbital ordering, which are intimately related to specific phonon modes, as in the case of BiCrO3 or LaVO3, respectively. A method based on the …