Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 896 for “"nitride"”.
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Texture evolution in metal nitride (aluminum nitride, titanium nitride, hafnium nitride) thin films prepared by off-normal incidence reactive magnetron sputtering
… of crystallographic texture in aluminum nitride (AlN), titanium nitride (TiN) and hafnium nitride (HfN) films deposited by off-normal incidence reactive magnetron sputtering at room temperature in N2/Ar mixtures. Texture measurements were performed by x-ray pole figure analysis of the …
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Semiconductor electronic band alignment at heterojunctions of wurtzite aluminum nitride, gallium nitride, and indium nitride
In this thesis the band alignments for wurtzite (0001) heterojunctions of AlN, GaN, and InN semiconductors are measured by x-ray photoemission spectroscopy. The bands alignments are all found to be Type I, and the valence-band discontinuities are found to be:(UNFORMATTED TABLE OR EQUATION …
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Investigations of the gallium nitride, aluminum nitride and indium nitride semiconductors: Structural, optical, electronic and interfacial properties
… of both zincblende and wurtzite Group III - Nitride wide bandgap semiconductor materials. All of the thin films studied were grown by plasma-enhanced molecular beam epitaxy on either GaAs and SiC substrates. This growth method proved to be suitable for nitride expitaxial growth although …
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Metalorganic chemical vapor deposition of aluminum nitride and gallium nitride
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1992.
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Thermal and photochemical vapor deposition of aluminum nitride and gallium nitride
… The current status of work on the column III-nitride system of compound semiconductors is reviewed with special attention given to the material challenges presently limiting sophisticated device development. Furthermore, the organometallic vapor phase epitaxy (OMVPE) method of growing these …
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Macroporous Semiconductors Tantalum Oxide, (Oxy)nitride and Nitride for Photocatalytic Hydrogen Evolution
Due to the serious climatic consequences of CO2 pollution and increasing global energy demand, a clean and sustainable energy source is required. Perhaps the ideal clean fuel is hydrogen, which would be sustainable if it could be sourced efficiently from water. Photocatalysis using …
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Macroporous Semiconductors Tantalum Oxide, (Oxy)nitride and Nitride for Photocatalytic Hydrogen Evolution
Due to the serious climatic consequences of CO2 pollution and increasing global energy demand, a clean and sustainable energy source is required. Perhaps the ideal clean fuel is hydrogen, which would be sustainable if it could be sourced efficiently from water. Photocatalysis using …
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Foundations of Ohmic Contact Formation on Aluminum Gallium Nitride/gallium Nitride Heterostructures
Aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) have tremendous potential for application in high frequencies, high temperatures and microwave and mm power amplifications. Fabrication of Ohmic contacts for such devices that meet the stringent …
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Porosity in Nitride Semiconductors
… etching (ECE) can be used to create pores in nitride semiconductors in order to engineer their properties. ECE offers a simple, flexible approach to pore formation, driven by an electric field between the material surface and a suitable electrolyte. This means that the material must be …
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Gallium Nitride Remote Epitaxy
… polar bonds. The remote epitaxy of gallium nitride (GaN) is studied in depth. Freestanding GaN thin film with a threading dislocation density of 2.1×10⁷ cm⁻² and electron mobility of 254 cm²/(V·s) is demonstrated. The thin film is then transferred onto a host substrate and the original …
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Gallium nitride MEMS resonators
… fields and saturation velocities, Gallium Nitride (GaN) has been increasingly used in high-power, high-frequency electronics and monolithic microwave integrated circuits (MMICs). At the same time, GaN also has excellent electromechanical properties, such as high acoustic velocities and low …
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Advanced Processing Techniques for Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors
Using all the processing advancements demonstrated through the research undertaken in this dissertation highlights the potential of GaN-based transistors for next generation millimeter-wave applications, and possibly digital applications.
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Synthesis, characterization, and biotemplated assembly of indium nitride and indium gallium nitride nanoparticles
A low-temperature, ambient pressure solution synthesis of colloidal InN nanoparticles is presented. This synthesis utilizes a previously dismissed precursor and results in individual, non-aggregated nanoparticles with long-term solubility and stability in organic solvents. These nanoparticles are …
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Impact of silicon nitride thickness on the infrared sensitivity of silicon nitride-aluminum microcantilevers
This thesis investigates how silicon nitride thickness impacts the performance of silicon nitride - aluminum bimaterial cantilever infrared sensors. A model predicts cantilever behavior by considering heat transfer within and from the cantilever, cantilever optical properties, cantilever bending …
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Processing, characterization, and mechanical properties of beta silicon nitride whisker/silicon nitride matrix composites
Ceramic matrix composites, consisting of $\beta$-$\rm Si\sb3N\sb4$ whisker reinforced polycrystalline $\rm Si\sb3N\sb4$, were fabricated with controlled whisker/matrix interfaces, characterized on the microstructural level, and evaluated for mechanical reliability. As-received and coated …
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Gallium Nitride phononic crystal resonator
We present a Gallium Nitride (GaN) Lamb Wave resonator using a Phononic Crystal (PnC) to selectively confine elastic vibrations with wide-band spurious mode suppression. A unique feature of the design demonstrated here is a folded PnC structure to relax energy confinement in the non-resonant …
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Synthesis and characterization of low pressure chemically vapor deposited boron nitride and titanium nitride films
… resulting compositions, and properties of boron nitride (B-C-N-H) and titanium nitride (Ti-N-Cl) films synthesized by low pressure chemical vapor deposition (LPCVD) using ammonia (NH_3)/triethylamine-borane and NH_3/titanium tetrachloride as reactants, respectively.Several analytical methods such …
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Ohmic Metallizations to Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors: Electrical and Microstructural Studies
"Major findings of this work include: (1) Elucidated the interfacial reactions between Al, Ti, AlTi alloy, and Ti/Al/Mo/Au on GaN. (2) Explained the electrical performance of Ti/Al/Mo/Au on AlGaN/GaN based on microstructural investigations. Proposed a ""spike"" mechanism. (3) Identified the role of …
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