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Showing 1 to 8 of 8 for “"multiple quantum well structures"”.
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Time-resolved Raman scattering in GaAs multiple quantum well structures
… the intersubband relaxation of carriers in GaAs multiple quantum well structures. For this investigation the application of the conventional Raman scattering technique was extended to the picosecond time domain. Inelastic light scattering from the elementary intersubband excitations of an …
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Development of intersubband terahertz lasers using multiple quantum well structures
… in developing intersubband THz lasers using multiple-quantum-well structures. Scarcity of compact solid state sources in this frequency range, and to demonstrate a novel unipolar laser technology, motivated this research. Transport studies for realizing THz intersubband population inversion, …
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I. Raman scattering and x-ray diffraction study of annealing effects on confined LO and folded LA phonons in gallium arsenide-aluminum arsenide superlattices. II. Picosecond light scattering studies of relaxation and tunneling in gallium arsenide/aluminum(x)gallium(1-x)arsenide multiple quantum well structures
… in GaAs/Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As multiple quantum well structures.
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Optical properties of gallium arsenide and indium gallium arsenide quantum wells and their applications to optoelectronic devices
… and strained-layer undoped InGaAs/GaAs multiple quantum well structures (MQWS). The phenomena studied are the effects of carrier, strain, and the electric field on the absorption of excitons. For GaAs/AlGaAs modulation doped MQWS, the quenching of excitons by free carriers has been …
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STUDY OF WURTZITE AND ZINCBLENDE GAN BASED GREEN LED HETEROSTRUCTURE
… based LEDs. The investigated wz-GaN based multiple quantum well structures have been found in other studies to have higher internal quantum efficiency (IQE) when the quantum wells (QWs) were grown at relatively high temperatures in MOVPE. In this thesis, more QW fluctuations were found as a …
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Toward ultra-broadband photoacoustic spectroscopy of supercooled liquids
… arsenide (GaAs) and aluminum arsenide (AlAs) and multiple quantum well structures (MQW) of indium gallium nitride (InGaN) and gallium nitride (GaN) as photoacoustic transducers are presented. The results demonstrate that InGaN/GaN SLs can be employed as broadband photoacoustic transducers, …
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Coherent optical nonlinearities in semiconductor microstructures
… optical nonlinearities in semi-conductor microstructures. Two distinct effects are studied. In the first part the excitonic optical Stark effect in InGaAs and GaAs multiple quantum-well structures is investigated by means of pump-probe spectroscopy. For nonresonant excitation below the …
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I. Raman scattering and x-ray diffraction study of annealing effects on confined LO and folded LA phonons in GaAs-AlAs superlattices ; II. Picosecond light scattering studies of relaxation and tunneling in GaAs/AlxGa1-xAs mulitple quatum well structures
… and the dynamics of electrons in GaAs/AlxGal-xAs multiple quantum well structures. In our study of the effects of annealing on a short-period GaAs/ AlAs superlattice we have used Raman scattering in conjunction with x-ray diffraction measurements to determine the effects of interface broadening on …