Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 257 for “"mosfets"”.
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Characterization and Modeling of 4H-SiC Low Voltage MOSFETs and Power MOSFETs
… models in the public domain for low voltage SiC MOSFETs. This work aims at filling that void, by providing a modified PSP model for SiC MOSFETs. In addition, a new compact model for SiC power MOSFETs has also been developed and validated with characterization data from a commercially available …
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Wide band noise in MOSFETs
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1993.
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Compressively strained Ge trigate p-MOSFETs
… of the materials of interest, particularly for p-MOSFETs, is Ge because it has very high intrinsic hole mobility. Further improvements in hole mobility can be achieved by straining the material. At the same time it is important to study strained Ge transport in device architectures such as trigate …
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Transport enhancement techniques for nanoscale MOSFETs
… the basics of the transport in nanoscale MOSFETs, the impact of channel material and strain configuration on electron and hole transport are examined. Uniaixal tensile strain in silicon is shown to be very promising to enhance electron transport as long as higher strain levels can be …
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DEFECTS AND LIFETIME PREDICTION OF GERMANIUM MOSFETS
… Ge is considered as a strong candidate for pMOSFETs due to the high hole mobility. Two approaches have been demonstrated: high-k/Si-cap/Ge and high-k/GeO2/Ge. Negative Bias Temperature Instability (NBTI) is still one of the main reliability issues, limiting the device lifetime. In this …
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High-K MOSFETS with high mobility channels
This PhD study consists of two parts. The first part investigates the integration of high-?? gate dielectrics HfO2 and HfAlO on high hole mobility compressive strained-SiGe (I?-SiGe) surface channel for pMOSFET. A high-??/I?-SiGe interfacial layer contains GeOx if the dielectrics are deposited on …
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Bias temperature instability (BTI) in GaN MOSFETs
… to positive and negative gate bias stress of GaN MOSFETs with various gate dielectrics. This has allowed us to postulate relevant physical mechanisms. For positive gate stress (PBTI), positive VT shifts are caused by a combination of electron trapping in pre-existing oxide traps and trap …
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Extreme-submicrometer silicon-on-insulator (SOI) MOSFETs
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.
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InGaAs Quantum-Well MOSFETs for logic applications
… has taken place recently in demonstrating InGaAs MOSFETs for this goal. Among possible InGaAs MOSFET architectures, the recessed-gate design is an attractive option due to its scalability and simplicity. In this thesis, a novel self-aligned recessed-gate fabrication process for scaled InGaAs …
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Resonant Gate Drive Techniques for Power MOSFETs
… To further expand its use in driving Half-Bridge MOSFETs, another circuit is proposed in this thesis. The later circuit simplifies the isolation circuitry for the top MOSFET and meanwhile consumes much lower power than conventional gate drivers.
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Low temperature studies of transport in silicon MOSFETs.
This dissertation is the outcome of three years work in the semiconductor Physics group at the Cavendish Laboratory, during which time I was financially _supported by the Science and Engineering Research Council. Many thanks are due to my supervisor, Mike Pepper, for his advice and enthusiastic …
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Nano-scale ohmic contacts for III-V MOSFETs
… major challenges of extremely-scaled III-V logic MOSFETs is the series resistance. To achieve the performance goals, it is necessary to fabricate source and drain ohmic contacts with ultra-low contact resistance, perhaps as low as 50 [Omega] · [mu]m. This is particularly difficult to achieve as …
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Physics of high-frequency operation in silicon MOSFETs
Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
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Characterization and modeling of low-frequency noise in MOSFETs
… than bipolar ones is the low-frequency noise. In MOSFETs, low-frequency noise is mainly of two kinds: flicker or 1/f noise and random telegraph signal noise (RTS). The objective of this thesis is to characterize and to model the low-frequency noise by studying RTS and flicker noise under both …
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Gating Methods for High-Voltage Silicon Carbide Power MOSFETs
… enabling the next generation high-voltage SiC MOSFETs are discussed. </p>
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In-situ impedance characterization for assessing SiC MOSFETs reliability
… monitoring (CM) of Silicon Carbide (SiC) MOSFETs. The core concept involves injecting a pre-adjusted high-frequency current (≥ 2 MHz) into the device and isolating the resulting voltage component induced by this injection. By applying algebraic operations, the drain-to-source impedance is …
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Condition monitoring of SiC MOSFETs on LLC resonant converter
Silicon carbide (SiC) MOSFETs are widely acknowledged for low loss, fast switching and remarkable thermal conductivity compared to silicon (Si) counterparts. SiC-based power electronic converters, therefore, are optimal when operated at medium voltage to high voltage in high switching frequency …
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