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Showing 1 to 20 of 97 for “"ion bombardment"”.

  1. Magnetoresistance and ion bombardment induced magnetic patterning

    Höink, VolkerUniversität Bielefeld

    In this thesis the combination of the magnetic patterning of the unidirectional anisotropy and the tunnel magnetoresistance effect is investigated. In my diploma thesis, it has been shown that it is in principle possible to use the magnetic patterning by ion bombardment to magnetically structure …

    bielefeld Repository record

  2. Effect of Ion Bombardment on Semiconductor Surfaces

    Arnold, Stephen ReynoldsUniversity of Illinois at Urbana-Champaign2015

    Made available in DSpace on 2015-05-12T17:12:15Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 5904486.PDF: 3201746 bytes, checksum: f4a930da76c72310a255271494f66660 (MD5) Previous issue date: 1959

    uiuc Repository record

  3. Nanostructures and their metastabilities in silicon induced by ion bombardment

    Zhu, Xianfang2000

    aus-cath Repository record

  4. Nanostructures and their metastabilities in silicon induced by ion bombardment

    Zhu, Xianfang2000

    anu Repository record

  5. Design and Characterization of a Plasma Source for Ion Bombardment

    Schultz, Benjamin J.2017

    Made available in DSpace on 2017-07-06T18:56:15Z (GMT). No. of bitstreams: 3 Schultz_Benjamin_J_MS.pdf: 1476291 bytes, checksum: ea900ce1e7fcb7dc660f02399e8150e4 (MD5) Schultz_Benjamin_J_MS_ABS.pdf: 50666 bytes, checksum: 49ed1e0372f7784eefbecbfd08e28eea (MD5) license.txt: 4813 bytes, checksum: …

    uiuc Repository record

  6. Low Energy Ion Bombardment Effects in Supersaturated Copper-Indium Alloys

    Rivaud, LydiaUniversity of Illinois at Urbana-Champaign2014

    Scanning transmission electron microscopy and Auger electron spectroscopy were used to investigate the effects of low energy (200 - 3000 eV) Ar('+) ion bombardment of supersaturated Cu:In alloys. Ion bombardment always resulted in the preferential sputtering of In although for sample temperatures …

    uiuc Repository record

  7. Structure, Stress and Surface Evolution in Silicon Due to Ion Bombardment

    Kalyanasundaram, NagarajanUniversity of Illinois at Urbana-Champaign2015

    … part of the work, a new multiscale computational method to study surface evolution is developed. In the new method, called crater function method, an average response of the silicon surface to a single argon impact is computed using molecular dynamics simulations at 500eV beam energies. …

    uiuc Repository record

  8. Scaling relationships for power deposition and ion bombardment in radio-frequency plasmas

    Liu, JoanneMassachusetts Institute of Technology1993

    Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1993.

    mit Repository record

  9. The effects of ion bombardment on the chemical reactivity of GaAs(100)

    Epp, June MiriamVirginia Polytechnic Institute and State University1989

    The effects of ion bombardment on the chemical reactivity of GaAs(100) were investigated by X-ray photoelectron spectroscopy. The enhancement in reactivity was shown to be related to the energy and mass of the bombarding ion. The oxidation results were compared to chemically cleaned (1:1 …

    vt Repository record

  10. A plasma-wall interaction model for the erosion of materials under ion bombardment

    Logarzo, Hernan JavierGeorgia Institute of Technology2022

    Understanding the evolution and behavior of materials exposed to plasma is critical for the design of future electric propulsion devices. As ions are ejected from the device generating thrust, they also impact the ceramic walls. This induces wall erosion, ultimately exposing the magnetic circuit …

    gatech Repository record

  11. Modeling and analysis of nanoscale surface patterns produced by broad beam ion bombardment

    Loew, Kevin M., author, Bradley, R. Mark, advisor, Gelfand, Martin, committee member, Shipman, Patrick, committee member, Wu, Mingzhong, committee memberColorado State University. Libraries2020

    When a solid surface is exposed to broad beam ion bombardment, nanoscale patterns may spontaneously form. This physical phenomenon is of interest to both the academic and nanofabrication communities. Ion bombardment has the potential to provide a cost-efficient method of producing nanoscale …

    colostate Repository record

  12. The effect of low energy ion bombardment on the crystallographic orientation of thin films

    Yu, Lock SeeMassachusetts Institute of Technology1985

    Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1985.

    mit Repository record

  13. Ion bombardment induced compositional changes in compound semiconductor surfaces studied by XPS combined with LEISS

    Yu, WeiAston University1995

    Surface compositional change of GaP, GaAs, GaSb, InP, InAs, InSb, GeSi and CdSe single crystals due to low keV noble gas ion beam bombardment has been investigated by combining X-ray Photoelectron Spectroscopy (XPS) and Low Energy Ion Scattering Spectroscopy (LEISS). The purpose of using this …

    aston Repository record

  14. Effect of irradiation parameters on the surface pattern evolution in silicon due to ion bombardment

    Das, KallolUniversity of Illinois at Urbana-Champaign2010

    … on 2010-07-21T20:48:21Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 2 Das_Kallol.doc: 21661184 bytes, checksum: f2409065741a6879ad0d1ce7b1723624 (MD5) Das_Kallol.pdf: 3864584 bytes, checksum: 5e48ced77ebf2d0162a3bcf56a1849ba (MD5)

    uiuc Repository record

  15. Investigation of the effects of low energy high dose ion bombardment in metals and compound semiconductors

    Sangheera, Harpreet KaurAston University1998

    The effect of low energy nitrogen molecular ion beam bombardment on metals and compound semiconductors has been studied, with the aim to investigate at the effects of ion and target properties. For this purpose, nitrogen ion implantation in aluminium, iron, copper, gold, GaAs and AIGaAs is studied …

    aston Repository record

  16. The effect of glow discharge on silicon surface barrier detectors

    Liu, BoqingRice University1966

    … to the study of the effect of charge particle bombardment on surface-barrier detectors in a glow discharge tube. It is found that positive ion bombardment causes an increase in junction capacitance of the detector, while the electron bombardment causes a decrease. This phenomenon can be …

    rice Repository record

  17. Etching kinetics and surface roughening of polysilicon and dielectric materials in inductively coupled plasma beams

    Yin, Yunpeng, Ph. D. Massachusetts Institute of TechnologyMassachusetts Institute of Technology2007

    … the feature sidewalls forming anisotropic striations. A clear understanding of the origin and control of sidewall roughening is extremely desirable, particularly at the gate level where variations in line width can adversely impact the electrical performance of the device. In addition, at the …

    mit Repository record

  18. Ion assisted magnetron sputtering of tantalum thin film deposition and characterization

    Ren, Hua

    … this research was to investigate the effects of ion bombardment on the crystallographic phases of tantalum films during their deposition by magnetron sputtering process, and to gain understanding of the mechanism of the ion-solid interactions during the thin film growth. Tantalum (Ta) exists in …

    njit Repository record

  19. Nanocrystalline copper-tantalum composites

    Savage, Howard ScottUniversity of Illinois at Urbana-Champaign2011

    … coarsening, and processing/structure relationships for Cu$\sb{\rm 1-x}$Ta$\sb{\rm x}$ (x = $\sim$5 to 20 atomic percent) alloys. These metastable alloys were produced using a plasma assisted physical vapor deposition (PAPVD) process which allowed ion bombardment during alloy deposition. …

    uiuc Repository record

  20. Ion-beam processes in group-III nitrides

    Kucheyev, Sergei2002

    … InGaN, and AlGaN) are important for the fabrication of a range of optoelectronic devices (such as blue-green light emitting diodes, laser diodes, and UV detectors) as well as devices for high-temperature/high-power electronics. In the fabrication of these devices, ion bombardment represents a …

    aus-cath Repository record

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