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Showing 1 to 10 of 10 for “"copper diffusion"”.

  1. A study of copper diffusion through Pd₂Si thin films

    … will soon limit device performance. Copper, with its low resistivity and greater resistance to electromigration is one of the obvious substitutes. However, before aluminium can be replaced by copper, a careful study of the reactivity of copper with metal-silicides used in devices …

    cape-town Repository record for A study of copper diffusion through Pd₂Si thin films (opens in a new tab)

  2. Study of Ruthenium and Ruthenium Oxide's Electrochemical Properties and Application as a Copper Diffusion Barrier

    As a very promising material of copper diffusion barrier for next generation microelectronics, Ru has already obtained a considerable attention recently. In this dissertation, we investigated ruthenium and ruthenium oxide electrochemical properties and the application as a copper diffusion barrier. …

    unt Repository record for Study of Ruthenium and Ruthenium Oxide's Electrochemical Properties and Application as a Copper Diffusion Barrier (opens in a new tab)

  3. Deposition and properties of Co- and Ru-based ultra-thin films

    Future copper interconnect systems will require replacement of the materials that currently comprise both the liner layer(s) and the capping layer. Ruthenium has previously been considered as a material that could function as a single material liner, however its poor ability to prevent copper

    texas Repository record for Deposition and properties of Co- and Ru-based ultra-thin films (opens in a new tab)

  4. Interfacial Electrochemistry and Surface Characterization: Hydrogen Terminated Silicon, Electrolessly Deposited Palladium & Platinum on Pyrolyzed Photoresist Films and Electrodeposited Copper on Iridium

    … candidate for investigation as a new generation copper diffusion barrier for the IC industry. Copper electrodeposition on iridium is studied to address the potential of iridium as a copper diffusion barrier. Copper electrodeposition is studied using a current-transient technique to obtain insight …

    unt Repository record for Interfacial Electrochemistry and Surface Characterization: Hydrogen Terminated Silicon, Electrolessly Deposited Palladium & Platinum on Pyrolyzed Photoresist Films and Electrodeposited Copper on Iridium (opens in a new tab)

  5. Electrodeposition of Copper on Ruthenium Oxides and Bimetallic Corrosion of Copper/Ruthenium in Polyphenolic Antioxidants

    Copper (Cu) electrodeposition on ruthenium (Ru) oxides was studied due to important implications in semiconductor industry. Ruthenium, proposed as the copper diffusion barrier/liner material, has higher oxygen affinity to form different oxides. Three different oxides (the native oxide, reversible …

    unt Repository record for Electrodeposition of Copper on Ruthenium Oxides and Bimetallic Corrosion of Copper/Ruthenium in Polyphenolic Antioxidants (opens in a new tab)

  6. Adherence/Diffusion Barrier Layers for Copper Metallization: Amorphous Carbon:Silicon Polymerized Films

    … to its lower resistivity and electromigration. Copper diffuses into silicon dioxide under thermal and electrical stresses, requiring the use of barriers to inhibit diffusion, adding to the insulator thickness and delay time, or replacement of SiO2 with new insulator materials that can inhibit …

    unt Repository record for Adherence/Diffusion Barrier Layers for Copper Metallization: Amorphous Carbon:Silicon Polymerized Films (opens in a new tab)

  7. Diffusion Barriers/Adhesion Promoters. Surface and Interfacial Studies of Copper and Copper-Aluminum Alloys

    … research is to study the interaction between copper and the diffusion barrier/adhesion promoter. The behavior of copper sputter-deposited onto sputter-cleaned tantalum nitride is investigated. The data show that copper growth on tantalum nitride proceeds with the formation of 3-D islands, …

    unt Repository record for Diffusion Barriers/Adhesion Promoters. Surface and Interfacial Studies of Copper and Copper-Aluminum Alloys (opens in a new tab)

  8. Integrated Catalytic Fabrication Approaches for Graphene-Based Electronic Devices

    … with typical metal catalysts -such as nickel or copper-, the commonly used SiO$_2$/Si substrate roughens at relevant growth temperatures due to the capillary action of the overlaying metal catalyst grain boundaries and its high interface diffusion, which makes this substrate less attractive for …

    cambridge Repository record for Integrated Catalytic Fabrication Approaches for Graphene-Based Electronic Devices (opens in a new tab)

  9. Materials studies related to the CuxS/ZnyCd1-yS solar cell

    … for phase changes in CuₓS appears to x be copper diffusion through the copper sulfide layer to the top surface as well as into the substrate. Changes in CuₓS stoichiometry were correlated with the sheet resistance of the CuₓS layer. Results indicate that heat treatment in a hydrogen …

    vt Repository record for Materials studies related to the CuxS/ZnyCd1-yS solar cell (opens in a new tab)

  10. Adhesion/Diffusion Barrier Layers for Copper Integration: Carbon-Silicon Polymer Films and Tantalum Substrates

    … (SIA) has identified the integration of copper (Cu) with low-dielectric-constant (low-k) materials as a critical goal for future interconnect architectures. A fundamental understanding of the chemical interaction of Cu with various substrates, including diffusion barriers and adhesion …

    unt Repository record for Adhesion/Diffusion Barrier Layers for Copper Integration: Carbon-Silicon Polymer Films and Tantalum Substrates (opens in a new tab)