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Showing 1 to 20 of 139 for “"amorphous silicon"”.
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Photoconductivity in amorphous silicon
… properties of undoped hydrogenated amorphous silicon have been extensively studied. Measurements of optical absorption, dark d.c. conductivity, steady state photoconductivity, step response transient rise photoconductivity and impulse response flash decay photoconductivity have been …
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Microwave studies of amorphous silicon
… the intrinsic paramagnetic center (g=2.0055) in amorphous silicon have been studied in the 0.3 -1.2 K temperature range. Various sample preparation techniques were used, including ion implantation, sputtering, arid vacuum evaporation. The temperature dependence of the spin lattice relaxation …
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Surface Diffusion Kinetics on Amorphous Silicon
In addition, the parameters for self-diffusion on amorphous silicon at processing temperatures (above 635°C) are determined by analyzing our own series of HSG growth experiments using chemical vapor deposition. The results of this study are compared to HSG growth data obtained from MBE growth …
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Grain Nucleation and Growth on Amorphous Silicon
Surface diffusion on amorphous silicon was investigated via both simulations and experiments. Molecular dynamics simulations yielded diffusion Arrhenius parameters close to published experimental values. Diffusion occurs by short migration of atoms following the breaking of strained four-membered …
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Single-crystal germanium growth on amorphous silicon
… stack in order to maximize the amount of silicon substrate available for electronic device fabrication. A CMOS-compatible back-end process for the fabrication of photonic devices is necessary to realize such a three-dimensional EPIC. Back-end processing is limited in thermal budget and …
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Density of gap states in hydrogenated amorphous silicon
<p>Amorphous silicon hydride films have been grown by an improved r.f. sputtering method in a hydrogen-argon atmosphere. Deposition parameters such as substrate temperature, gas flow rate, r.f. power, and argon partial pressure were kept constant, while hydrogen partial pressure was varied. The …
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Physical characteristics of laser processed hydrogenated amorphous silicon
Hydrogenated amorphous silicon films subjected to KrF excimer laser irradiation with a profiled beam in air leads to the formation of microstructures. The main objective of this research was to perform a comprehensive study in understanding this material in three different aspects: thermal, …
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Density Functional Study of Hydrogen in Amorphous Silicon
… if the remaining Si reconstructs with a nearby silicon creating a 5-fold coordinated defect then the energetics are in agreement with observations. Therefore, our results indicate that the dangling bond model for intrinsic defects in amorphous silicon should be revisited.
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A real-time study of hydrogenated amorphous silicon, microcrystalline silicon, and amorphous silicon carbide growth by optically enhanced infrared reflectance spectroscopy
… by studying the deposition of hydrogenated amorphous silicon (a-Si:H), microcrystalline silicon ($\mu$c-Si:H), and hydrogenated amorphous silicon carbide $\rm (a-Si\sb{1-x}C\sb{x}$:H) thin films by reactive magnetron sputtering. Complimentary information about the film microstructure is …
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Amorphous silicon carbide solar cells fabricated using ECR-PECVD
<p>http://www.worldcat.org/oclc/44392774</p>
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Dynamics of Melt-mediated Crystallization of Amorphous Silicon Films
… relatively effectively at the moving liquid-amorphous interface, (2) very defective crystal growth that leads to the formation of fine-grained Si proceeding, at least initially after the nucleation, at a sufficiently rapidly moving crystal solidification front, and (3) the propensity for …
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Electronic transport properties of thin films of amorphous silicon
… system capable of producing thin films of amorphous Silicon, and to evaluate the electronic transport properties of the material prepared over a wide range of deposition conditions, and (iii) to investigate the electronic transport properties of thin films of co-sputtered Silicon-Aluminium …
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Surface Structure and Growth Mechanisms of Hydrogenated Amorphous Silicon
Made available in DSpace on 2015-09-25T20:03:31Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9921704.pdf: 3532216 bytes, checksum: d6159bd04f372d8389e2b6d995b4b7fe (MD5) Previous issue date: 1999
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Light induced degradation in hydrogenated amorphous silicon (a-Si:H)
… optical properties of a series of hydrogenated amorphous silicon (a-Si:H) layers, deposited by hot wire chemical vapour deposition system (HWCVD) on glass and silicon substrates at different temperatures ranging from 250Light induced degradation in the microstructure and optical properties of a …
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Optically induced metastable defect states in amorphous silicon dioxide
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1986.
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Topological Characterization of Amorphous Silicon Structures Using Voronoi-Volume Analysis
<p>We studied the structural properties of amorphous silicon (a-Si) through Voronoi volume analysis. Amorphous silicon exhibits a lack of long-range ordering, which leads to topological disorder, and it affects the atomic structure. Voronoi volumes of different a-Si structures have been measured by …
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Steady state and transient photoconductivity in n-type amorphous silicon
Comprehensive measurements of secondary photoconductivity with steady optical excitation (SSPC), transient excitation (TPC), and steady state optical bias plus transient excitation (OB) were carried out on samples of glow-discharge produced n-type a-Si:H from two sources, lightly doped with …
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