Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 145 for “"Threshold Voltage"”.
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Synthesis constraint optimization for near-threshold voltage design
Near-threshold voltage (NTV) design is a viable solution to many embedded systems which require high energy efficiencies and low performances, but it makes them vulnerable to process variation. Increasing the size of devices and/or decreasing the operating frequencies of the systems can be the …
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Threshold voltage in pentacene field effect transistors with parylene dielectric
… and (3) the effects of interface traps on threshold voltage and parasitic bulk conductivity. Parylene was found to provide a favorable, hydrophobic interface for pentacene growth, yielding transistors with mobilities > 0.5cm²/Vs at -100V. While the two surface treatments explored did …
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Effect of MOSFET threshold voltage variation on high-performance circuits
… future CMOS technology generations, supply and threshold voltages will have to continually scale to sustain performance increase, limit energy consumption, control power dissipation, and maintain reliability. These continual scaling requirements on supply and threshold voltages pose several …
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Study on Channel Mobility and Threshold Voltage Towards SiC CMOS Devices
付記する学位プログラム名: 京都大学卓越大学院プログラム「先端光・電子デバイス創成学」
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Investigation of Threshold Voltage Instability in Normally Off GaN on Si HEMT
… the GaN buffer and transition layers. However, threshold voltage instability exists as a key reliability issue which is not well understood. In this thesis, we investigate on threshold voltage instability of normally off 600-650V p-GaN AlGaN/GaN on Si HEMT. This thesis aims to advance the …
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System-level optimization of the DC-DC voltage regulator and core for sub/near-threshold voltage operation
Switched capacitor voltage regulator module (SC-VRM) is suitable for low power embedded systems operating in near/sub-threshold region due to its high conversion ratio and compactness. However, existing optimization for SC-VRM is separated from the embedded core design and therefore leads to …
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The hydrogen-induced piezoelectric effect in InP HEMTs
… of III-V HEMTs has been shown to cause a threshold voltage shift, [delta] V[sub]T. This is a serious reliability concern. This effect has been attributed to a H-induced piezoelectric effect. Formation of TiH[sub]x expands the Ti layer in the gate, causing mechanical stress in the …
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Power Management Schemes for Ultra Low Power Biomedical Devices
… One of the schemes used is the supply voltage (Vdd) scaling, also known as Dynamic Voltage Scaling (DVS). DVS is an effective scheme to reduce dynamic power (Pdynamic) dissipation. The DVS architecture primarily consists of a DC-DC power regulator which is customised to handle scaling …
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Simulation and fabrication of GaN-based vertical and lateral normally-off power transistors
… (HEMTs) designed for different breakdown voltage application and at different size scaling levels. The comparison between two structures revealed that the vertical MOSFETs have the potential to achieve an up to 50% higher thermal performance, especially for higher breakdown voltage and …
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Quantitative Extraction of Bias Stress Parameters in Thin Film Transistors
… zinc oxide (a-IGZO), both suffer from a positive threshold voltage shift under the application of a positive gate bias, commonly called positive bias stress (PBS). The most common method for quantifying PBS is a direct current (DC) stability measurement which quantifies the threshold voltage shift …
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Investigation Of High-k Gate Dielectrics And Metals For Mosfet Devices.
… devices. This thesis gives an in-depth study of threshold voltages of PMOS and NMOS transistors using various high-k dielectric materials like Tantalum pent oxide (Ta2O5), Hafnium oxide (HfO2), Zirconium oxide (ZrO2) and Aluminum oxide (Al2O3) gate oxides. Higher dielectric constant may lead to …
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Two-Dimensional Analysis of Narrow Gate Effects in Micron and Submicron Mosfets (Device Simulation, Modeling)
… geometry effects in narrow gate MOSFETs, such as threshold voltage shift and subthreshold characteristics, are important factors in designing next generation MOS-VLSI circuits. It is well known that numerical methods, using the exact 2-D solutions of the transport equation and Poisson's equation …
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Novel many-core architectures for energy-efficiency
Ideal CMOS device scaling relies on scaling voltages down with lithographic dimensions at every technology generation. This gives rise to faster circuits due to higher frequency and smaller silicon area for the same functionality. The dynamic power density - equivalently, dynamic power, if the chip …
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A comparison of electrical performance analysis between nanoscale double-gate and gate-all-around nanowire mosfet
… when the gate length approaches 30 nm, the subthreshold slope increases for both devices while the threshold voltage is decreases. Futhermore, the threshold voltage will decrease with the decreasing of gate oxide thickness whilst increasing the silicon body thickness for both devices. Even …
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Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module
… current handling capability for the same bus voltage. However, inherent parametric differences among dies leads to unbalanced current sharing causing overstress and overheating. In this design, a symmetrical DBC layout is utilized to balance parasitic inductances in the current pathways of …
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4H-SiC FinFET devices and modelling
… has promising electrical properties in high-voltage, high-frequency switching applications for various power electronics applications. In particular, SiC power MOSFETs have undergone remarkable development and optimisation, turning them into serious competitors to more conventional Si …
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Optimal MOSFET design for low temperature operation
… of a MOSFET removing constraints on reducing the threshold voltage. In addition, lower temperatures increase the current drive via increased carrier mobility and saturation velocity. Equally as important, the parasitic resistances of the device and of the interconnect decrease as temperature …
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An organic thin-film transistor circuit for large-area temperature-sensing
… that OTFTs have temperature-dependent current-voltage (I-V) characteristics that are determined by trap states inside the bandgap. Based on this understanding, a DC OTFT circuit model is developed which accurately fits the measured I-V data in all regions of device operation and at different …
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Electrical Response of Carbon Nanotubes Under Electrolyte
… semiconducting nanotubes have shown a negative threshold voltage shift at low pHs. The potential offsets induced by surface charges on carbon nanotubes have been considered to explain the observed pH response of nanotube transistors under electrolyte. The noise measurements have been carried out …
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Design of Energy Efficient SOC With PIM Architecture and Deep Submicron Circuit Techniques
… current and power consumption due to the scaled threshold voltage of the transistor and increased number of gates in future VLSI chips, sub-1-V circuit techniques to suppress leakage current while meeting performance requirement are developed. High efficient charge recycling logic using charge …
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