Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 21 for “"TDDB"”.
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Dielectric reliability in GaN metal-insulator-semiconductor high electron mobility transistors
… of which is Time-Dependent Dielectric Breakdown (TDDB) of the gate dielectric. Under prolonged electrical stress, the gate dielectric suffers a catastrophic breakdown that renders the transistor useless. Understanding the physics behind gate dielectric breakdown and accurately estimating the …
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Dielectric reliability in high-voltage GaN metal-insulator-semiconductor high electron mobility transistors
… deployment. Time-dependent dielectric breakdown (TDDB), a catastrophic condition arising after prolonged high-voltage gate stress, is a particularly important concern. This thesis investigates this crucial reliability issue in depth. Using a robust characterization strategy, we have studied not …
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Time dependent dielectric breakdown in novel GaN metal-insulator-semiconductor high electron mobility transistors
… MIS-HEMTs: time dependent dielectric breakdown (TDDB) of the gate insulator. TDDB occurs when a high electric field causes an accumulation of defects in the gate dielectric, forming a conducting path and rendering the device unusable. This is of major concern in GaN MIS-HEMTs because of their …
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TiN/HfO2/SiO2/Si gate stacks reliability : Contribution of HfO2 and interfacial SiO2 layer
… of NBTI and time dependent dielectric breakdown (TDDB) such as the activation energies of threshold voltage change and SILC. The quality and thickness variation of the IL causes similar degradation on both NBTI and TDDB indicating that mechanism of these two reliability issues are related due to …
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Reliability and Data Analysis of Wearout Mechanisms for Circuits
… time-dependent dielectric breakdown (FEOL TDDB). The separation of wearout mechanisms for circuits will be investigated, and the identification of failure modes for the failure samples will be analyzed. SRAMs and ring oscillators will be used to study the failure modes. The systematic and …
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Characterization of high-k layers as the gate dielectric for MOSFETs
… and the time dependent dielectric breakdown (TDDB). Amplitude charge pumping and frequency sweep charge pumping are used to investigate the impact of gate electrodes and channel length on charging and discharging of the bulk defects. As channel length increases,it is found that bulk trapping …
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Electrical characterization of plasma-enhanced Cvd silicon nitride dielectric on copper
… and the time-dependent-dielectric breakdown (TDDB) under various electric fields. (Abstract shortened by UMI.).
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Experimental Analysis on Aging of Integrated Circuits
… (HCI), time dependent dielectric breakdown (TDDB), and electromigration (EM) are coming up as potential threats to superior performance in the field. All these reliability issues cause intermittent failures and finally cause the performance of the chips to degrade over time. In this thesis, …
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Reliability Studies of TiN/Hf-Silicate Based Gate Stacks
… it. During time dependent dielectric breakdown, TDDB, four regimes of degradation are observed under CVS with high gate bias conditions: (i) charge trapping/defect generation, (ii) soft breakdown (SBD), (iii) progressive breakdown and (iv) hard breakdown (HBD). Activation energy of bond-breakage, …
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Reliability study of Zr and Al incorporated hf based high-k dielectric deposited by advanced processing
… samples. Time dependent dielectric breakdown (TDDB) shows that DSDS Hf_{1-x}Zr_xO_2 (x=0.8) has the superior characteristics with reduced oxygen vacancy, which is affiliated to electron affinity variation in HfO2 and ZrO2. The trap activation energy levels estimated from the temperature …
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Electrical characterization of ferroelectric capacitors for non-volatile memory applications
… and time dependent dielectric breakdown (TDDB) are used to study the electrical current properties and charge transport mechanism in memory applications. Finally, the AC conductivity (complex impedance) characterization method, introduced here for the first time for ferroelectric …
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Systematics of bond length and radii variations in fluoride and silicate molecules and crystals
… current, time dependent dielectric breakdown (TDDB) and retention, were studied with regard to the Zr/Ti ratio, the excess lead, the annealing temperature, the electrode material and the doping amount. Furthermore, the pyrochlore to perovskite phase transformation of PZT on RuO₂ electrodes was …
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Electrical properties of doped and undoped PZT thin films prepared by a sol-gel method
… current, time-dependent dielectric breakdown (TDDB), and retention, were studied with regard to the Zr/Ti ratio, the excess lead, the annealing temperature, the electrode material, and the doping amount. Furthermore, the pyrochlore to perovskite phase transformation of PZT on RuO₂ electrodes …
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Integration of pentacene-based thin film transistors via photolithography for low and high voltage applications
… The time dependent dielectric breakdown (TDDB) and the time-zero dielectric breakdown (TZDB) are studied as a function of the polarity constant DC current stress, dielectric thickness, temperature, and surface treatments. Results show that current flows through these films via Schottky …
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Electrical characterization of high-k gate dielectrics for advanced CMOS gate stacks
… studied by time dependent dielectric breakdown (TDDB). High-k dielectric is subjected to the different slot plane antenna oxidation (SPAO) processes, namely, (i) before high-k ALD (Atomic Layer Deposition), (ii) between high-k ALD, and (iii) after high-k ALD. High-k layer and interface states are …
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Study Of Nanoscale Cmos Device And Circuit Reliability
… a methodology was developed to predict the HC, TDDB, and NBTI effects on the RF circuits with the nanoscale CMOS. It provides guidance for the reliability considerations of the RF circuit design. The BD, HC, and NBTI effects on digital gates and RF building blocks with the nanoscale devices – …
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Resistive Switching Behavior in Low-K Dielectric Compatible with CMOS Back End Process
… metallization is therefore an interesting topic. TDDB measurements have been performed on pure covalent materials, low-k dielectric MIM and MI-semiconductor (MIS) devices supplied by Intel Inc.
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Semantic autoencoder for modeling dielectric lifetime distributions
Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2025-10-19 without embargo terms
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Statistical modeling and simulation of variability and reliability of CMOS technology
<p>The introduction of High-κ Metal Gate transistors led to higher integration density, low leakage current, and faster switching speed. However, this transition in technology roadmap brought about new failure mechanisms such as Positive Bias Temperature Instability and Stress Induced Leakage …
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Dependence of Set, Reset and Breakdown Voltages of a MIM Resistive Memory Device on the Input Voltage Waveform
Owing to its excellent scaling potential, low power consumption, high switching speed, and good retention, and endurance properties, Resistive Random Access Memory (RRAM) is one of the prime candidates to supplant current Nonvolatile Memory (NVM) based on the floating gate (FG) MOSFET transistor, …
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