Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 17 of 17 for “"TCAD simulation"”.
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Ic-Rest(2): A Time-to-Market Driven IC Reliability Statistics Tool
The tool combines TCAD simulation, short-time tests and novel solutions to the SiO2 and Si-SiO2 defect generation rate equations (in time and space) under static and dynamic operation. The predicted failure statistics are best described by the generalized Gamma-distribution (or more accurately the …
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Modeling and simulation of nano-scale transistor
Modeling and simulation of nano-scale transistor plays an important role in designing circuits. They serve as the medium of exchanging information between foundries and circuit designers. In the past several decades, the innovations of transistor technology such as FDSOI and FinFET have been the …
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Uncalibrated TCAD methodology for analysis of ESD protection devices
In this work, an uncalibrated TCAD methodology for simulation of electrostatic discharge (ESD) devices is presented. The methodology addresses TCAD setup issues including device construction, boundary conditions, and choosing a physical model and parameters. A major trade-off between computation …
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High-voltage ESD PNP clamp simulation and design
… discharge (ESD) PNPs are studied through TCAD simulation and device measurement. PNPs for three different voltage classes, 16 V, 65 V, and 100 V, in a 0.5-µm Bipolar CMOS DMOS (BCD) technology are used as the context for the study. The PNPs are varied in choices of topology, layout …
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Modeling and numerical methods for power electronic devices
… voltage, are captured by the model in circuit simulation. TCAD simulation is used to gain physical insight into the behavior of non-collinear PNPN devices. The dynamic behavior of switched-mode power supplies is simulated by adopting a state-space representation. Piecewise linear models are …
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TCAD approaches to multidimensional simulation of advanced semiconductor devices
… to the conventional planar MOSFET architecture. TCAD simulation tools are fundamental to the analysis and development of new technology generations. However, the increasing device complexity is reflected in an augmented dimensionality of the problems to be solved. The trade-off between accuracy …
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Third Quadrant Operation of 1.2-10 kV SiC Power MOSFETs
… a combination of device characterization, TCAD simulation and analytical modeling. It is revealed that, once the MOS channel turns on, it changes the potential distribution within the device, which further makes the body diode turn on at a source-to-drain voltage (VSD) much higher than the …
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Behavioral Modeling of CMOS SPADs Based on TCAD Simulations
… Athena from the Silvaco tools suite to feed a TCAD simulator with an accurate model structure that can include fabrication defects. Extract its key parameters with TCAD simulation of the device, performed with ATLAS, from the Silvaco TCAD tools suite. Combine physical parameters and analytical …
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Design, Modeling and Analysis of Non-classical Field Effect Transistors
… performed through device physics analysis and TCAD modeling methodology to develop design guidelines utilizing transistor's improved characteristics toward application-specific circuit performance enhancement. Results support proposed device design methodologies that will allow development of …
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Multi-Kilovolt Gallium Nitride Power Transistors
… physics-based technology computer-aided design (TCAD) simulation. The third part of this work demonstrates a 3.3-kV monolithic bidirectional switch (MBDS), which a novel device concept that can significantly simplify the circuit design in alternative current (AC) power conversion. A symmetrical …
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3D detectors for synchrotron applications
… using a combination of lab tests and computer simulations. Using these results, future fabrication runs can then be re-designed to improve their performance. Firstly, the "Synopsys TCAD" simulation package was used to determine the optimum design for 3D detectors at the SLHC. It was found that …
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Design of Novel Devices and Circuits for Electrostatic Discharge Protection Applications in Advanced Semiconductor Technologies
… design methodology for SCR based on simulation and measurement are presented for different advanced commercial technologies. Furthermore, an ESD clamp is designed and verified for the first time for the emerging GaN technology. For the SCR, no matter what modification is going to be …
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Junction Based Gallium Nitride Power Devices
… and low on-state resistance in HEMT devices. Simulation is also performed to project the performance space of trigate GaN junction HEMTs using the p-GaN instead of NiO. The third part of this dissertation presents the application of the p-GaN/n-GaN junction in the drift region of the …
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H-BN integration in III-nitride devices for green hydrogen applications
… production is evaluated through numerical simulations. The most efficient InGaN photoelectrode identified through these studies is selected for a techno-economic analysis to assess the technology viability at a commercial scale. This analysis evaluates the competitiveness of a fully …
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Robustness and Stability of Gallium Nitride Transistors in Dynamic Power Switching
… gate. This is verified by the physics-based TCAD (Technology Computer-Aided Design) simulation. After the stress, MIS-HEMT cannot fully recover naturally. Applying at positive gate-to-source bias (VGS) is found to be able to accelerate the threshold voltage recovery but not the saturation …
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Novel pixel CMOS sensors for radiation detection applications and sub-nanosecond timing measurements
L'abstract è presente nell'allegato / the abstract is in the attachment
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Multigate MOSFETs for digital performance and high linearity, and their fabrication techniques
… was further investigated through numerical simulation. A new kind of FinFET with asymmetric gate and source/drain contacts has been proposed and simulated. By benchmarking with conventional symmetric FinFET, better short-channel behavior with much higher current density is confirmed. The …