Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 10 of 10 for “"Random alloy"”.
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Tight-binding simulations of random alloy and strong spin-orbit effects in InAs/GaBiAs quantum dot molecules
… the incorporation of dilute \ce{GaBi_xAs_{1-x}} alloys in the barrier region between the two dots, as \ce{GaBiAs} is expected to provide an increase in spin-mixing of the molecular states over \ce{GaAs}. Using an atomistic tight-binding model, we compute the properties of \ce{GaBi_xAs_{1-x}} and …
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A study of the elastic and electronic properties of III-nitride semiconductors
… based on the technologically important InxGa1_xN alloy system. An investigation of the effects of structural inhomogeneities in these systems is made; specifically, the impact of random alloy fluctuations and well width fluctuations on the electronic and optical properties is investigated. This …
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Investigation of the mechanical properties and phase stability of Ti-transition metal alloys using first-principle calculations
The ternary Ti-X-B (X=Mo/V/Fe/Nb) alloy system has three distinct material classes depending on the fraction of monoboride phase in the Ti-matrix, which makes them useful for broad applications such as aerospace and biomedical fields. Based on the design principle of searching for Ti-monoboride …
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Nitride semiconductors studied by atom probe tomography and correlative techniques
… origin of charge carrier localisation in InGaN. Alloy inhomogeneities have often been suggested to provide this localisation, yet APT has revealed InGaN quantum wells to be a statistically random alloy. Electron beam irradiation in the TEM caused damage to the InGaN, however, and a statistically …
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Theory of carrier transport in III-Nitride based heterostructures
Wurtzite III-nitride materials and their alloys have attracted significant interest for solid state lighting applications. This is due to the direct band gaps of InN, GaN, and AlN crystals, which span a wide range of emission wavelengths. Due to the importance of these systems, the goal of …
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Resonant Raman scattering studies of III-V semiconductor microstructures
… three aspects of Raman utility. AlxGa 1_xAs alloy work emphasizes electronic behavior, migration enhanced epitaxy (MEE) studies highlight structural results, and a phonon-assisted lasing project underscores electron-phonon interaction. The disorder-induced frequency difference between the …
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High quality metamorphic graded buffers with lattice-constants intermediate to GaAs an InP for device applications
… they act in a mechanically-similar fashion as a random alloy.
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Heteroepitaxial Interfaces Modify Collective States in Complex Oxides
… CaMnO3, electronic properties in ordered pseudo alloys having average doping, x=⅓ was compared with random alloy La⅔Sr⅓MnO3 samples. Effects due to strain disorder and charge disorder/localization was discussed. Magnetic order of manganite layers near a titanate interfaces was also probed using …
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Revisiting the theory of alloy thermal conductivity
… waves. For example, the phonon contributions to alloy thermal conductivity rely on this assumption and are most often computed from the virtual crystal approximation (VCA). In this dissertation, we show that the conventional theory and understanding of phonons requires revision, because the …
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Fabrication and Characterization of Optoelectronics Devices Based on III-V Materials for Infrared Applications by Molecular Beam Epitaxy
… significantly, as compared to those with random-alloy barriers due to the removal of growth interruption at the barrier/well interfaces in digital growth. As a result, high-performance devices were achieved in the InGaAsSb lasers with digital AlGaAsSb barriers. A low threshold current …