Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 66 for “"RIE"”.
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In situ monitoring of reactive ion etching using a surface micromachined integrated resonant sensor
… etched, allowing etch rate to be inferred. This RIE monitoring methodology exploits the accuracy of resonant micromechanical structures, whereby shifts in the fundamental resonant frequency measure a physical parameter. A majority of these systems require free-standing mechanical movement and …
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Optical Spectroscopy Studies of the Reactive Ion Etching of Silicon and Gallium-Arsenide in Halomethane-Based Discharges
The Reactive Ion Etching (RIE) behavior of Si and GaAs in d.c. halomethane-based discharges has been investigated using Glow Discharge Optical Spectroscopy in both emission and absorption modes. The etching of GaAs was found to be anisotropic and a carbon layer formed on the etched surfaces. A post …
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Optimization of Reactive Ion Etching to Fabricate Silicon Nitride Stencil Masks in SF6 Plasma
… of the membrane using a reactive ion etch (RIE) process that determine the printed pattern. This project deals with the optimization of a sulfur hexafluoride and oxygen RIE. In this process, 0.5µm thick silicon nitride membranes are coated with 20nm of copper (hard mask) and 200nm of poly …
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Characterization and modeling of plasma etch pattern dependencies in integrated circuits
… arise in plasma etching due to microloading and RIE lag. This thesis contributes a semi-empirical methodology for capturing and modeling microloading, RIE lag, and related pattern dependent effects. We apply this methodology to the study of interconnect trench etching, and show that an integrated …
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Characterization of reactive ion etching of III-V compound semiconductor materials
Reactive ion etching (RIE) of III-V compound semiconductor materials such as InP, InGaAs, InAlAs, and InGaAsP in methane (CH$\sb4$) gas mixtures has been investigated. Etch rates of 800, 400 and 600 A are obtained for InP, InGaAs, and InGaAsP, respectively. Optimum processes have been developed for …
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Reactive Plasma Etching of Silicon Carbide, Silicon Carbonitride, and Titanium Nitride in a Tetrafluoroethane/Oxygen Plasma
… we investigate the etching of the diffusion barrier between the silicon substrate and the 1ow-k dielectric material. We will use silicon carbide (SiC), silicon carbonitride (SiCN), and titanium nitride (TiN) as our diffusion layer. Using the RF plasma and the magnetron gun with 1,1,1,2 …
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A nanostructured porous silicon based drug delivery device
… etching method; ii) a reactive ion etching (RIE) method through a masking template. Random pores, with irregular pore shape and size in the micro- to mesoporous regime (< 50 nm), were obtained using the stain etching method but this method suffered from poor reproducibility and …
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High-performance gallium nitride power devices with efficient edge termination structures compliant with plasma-assisted molecular-beam epitaxy based silicon nitride shadowed selective-area growth technique
… plasma reactive-ion etching (ICP-RIE) etching, introduce lattice damage and defects, causing large leakage current components. Second, inefficient edge termination (ET) designs are incapable of reaching ideal parallel-plane breakdown voltage. This work aims to overcome the …
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Investigation of fabrication process development for integrated optical grating structures
… into silicon by reactive ion etching (RIE). Rectangular gratings with 200nm--500nm feature size and 50% pitch were successfully fabricated. Borofloat, silica and alumina have been etched using chrome as a mask with vertical sidewalls. Grating structures of any pitch can be created in …
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Literature Sources in Elementary and Early Childhood Education (Bibliometrics, Eric, Citation Analysis)
… is grouped according to intended audience orientations through the use of pubtypes (publication type codes assigned to ERIC documents during the indexing process). The three orientations identified are research, interpretation, and practice. One hundred ERIC documents are randomly selected …
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MATERIALS CHARACTERIZATION FOR SUB-MICRON SUPERCONDUCTING INTERCONNECTS IN RECIPROCAL QUANTUM LOGIC CIRCUITS
… wires, and the other using reactive ion etching (RIE) to define Nb wires. At 4.2 K, the Nb loss in the 0.25 $\mu m$ resonators between the 3 processes were surprisingly distinct. The two CMP processes yield Nb losses up to 2 times higher relative to the RIE process, and have a discernible increase …
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Post assembly process development for Monolithic OptoPill integration on silicon CMOS
… circuit. Fabrication procedures, challenges experienced, and results accomplished are presented for each process step including the formation of alloyed and non-alloyed ohmic contacts on n-type and p-type InGaAs contact layers, active area definition by dry-etching InGaAs/InP with ECR-enhanced …
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Application of multivariable and intelligent control strategies for improving plasma characteristics in reactive ion etching
Reactive Ion Etching (RIE) is a critical technology for modern VLSI circuit fabrication and is used at many stages of the manufacturing process. Several real-time control strategies such as Proportional-Integral ( PI ) self-tuning, Linear Quadratic Gaussian ( LQG ), stochastic adaptive control, …
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Fabrication and applications of pillar bowtie nanoantenna arrays
… for thin film deposition, reactive ion etching (RIE) for high aspect ratio pillar nanostructure and scanning electron microscopy (SEM) for imaging, has been presented. We carefully explain the reasons for choosing each parameter of each tool. For electron beam lithography, we look into the …
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High Density Plasma Etching of Wide Bandgap Semiconductor Materials for Fabricating Novel Devices
… 0.15 mum gate-length AlGaN/GaN HEMTs using ICP-RIE on sapphire substrate. These devices exhibited high DC and RF performance. The drain current density as high as 1.31 A/mm, a peak transconductance of 401 mS/mm, an fT of 107 GHz and an f max of 148 GHz were measured on these devices. To the best …
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Diamond nanophotonic devices for quantum information processing and sensing
… by a combination of reactive ion etching (RIE) and focused ion beam milling. We compare it to transferred silicon hard mask lithography with RIE. Chapter 5 demonstrate NV-nanocavity systems in the strong Purcell regime with consistently high Q factors while preserving the long spin …
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Analysis and modeling of inelasticity in tendon: viscoelasticity, damage, and plastic deformation
… modeling framework, reactive inelasticity (RIE), that describes the major inelastic mechanical behaviors of tendon using kinetics of molecular bonds; (2) evaluating damage and plastic deformation as the potential mechanisms of tendon softening behavior during axial loading by using …
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Design, fabrication, and characterization of a compact deep reactive ion etching system for MEMS processing
… to build, this rule serves as a significant barrier to entry for groups seeking to commercialize new semiconductor devices aimed at smaller market segments which require a dedicated process. To eliminate this cost barrier we are working to create a small-scale production suite of tools that will …
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Elementary processes in alkane-based reactive ion etching of III-V semiconductors
Reactive ion etching (RIE) is a process used extensively in the microelectronics industry. Recently, the use of alkane-based plasmas has been developed for the etching of compound semiconductors. However, due to the complex nature of the plasma environment, relatively little is known about the …
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Synthesis of self-assembled polystyrene nanospheres/cadmium metal nanoparticles (PSNs/CdMNPs) composite thin film for its application as adsorbent and catalyst
… and oxygen/argon reactive ion etching (O2/Ar RIE), respectively. Thermal catalytic effect of CdMNPs was investigated through thermogravimetry/differential thermal analysis (TG/DTA). Any chemical bond change of the PSNs/CdMNPs composite due to both CdMNPs and adsorbate molecules were confirmed …
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