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Showing 1 to 20 of 74 for “"Power semiconductor"”.

  1. Novel Power Semiconductor Devices and Technologies

    … is devoted towards the development of efficient power semiconductor devices. It will focus upon the development of 1200V and 1700V fast recovery diodes and two MOS gated thyristor structures viz. the Accumulation Layer enhanced Emitter Switched Thyristor (ALEST) and the Clustered IGBT (CIGBT). …

    de-montfort Repository record for Novel Power Semiconductor Devices and Technologies (opens in a new tab)

  2. AlGaN/GaN-based power semiconductor switches

    … for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and charge density. The ability to grow these devices on large-diameter Si wafers also reduces device cost and makes them easier for wide market adoption. However, …

    mit Repository record for AlGaN/GaN-based power semiconductor switches (opens in a new tab)

  3. Modeling optically activated high power semiconductor switches

    … field observed in the operation of a high power photoconductive semiconductor switch. The model solves the continuity equations for electrons, holes, and traps, the energy equation for the lattice, Poisson's equation, and a circuit equation. Physical effects in the model include …

    uiuc Repository record for Modeling optically activated high power semiconductor switches (opens in a new tab)

  4. MODELLING AND DESIGN OF DIAMOND POWER SEMICONDUCTOR DEVICES

    … advantages over Silicon and wide bandgap semiconductors (WBG) for ultra-high voltage and high temperature applications (>3 kV and >450 K, respectively). However, despite its tremendous potential, fabricated devices based on this material have not yet delivered the expected …

    cambridge Repository record for MODELLING AND DESIGN OF DIAMOND POWER SEMICONDUCTOR DEVICES (opens in a new tab)

  5. Hard Switched Robustness of Wide Bandgap Power Semiconductor Devices

    As power conversion technology is being integrated further into high-reliability environments such as aerospace and electric vehicle applications, a full analysis and understanding of the system's robustness under operating conditions inside and outside the safe-operating-area is necessary. The …

    vt Repository record for Hard Switched Robustness of Wide Bandgap Power Semiconductor Devices (opens in a new tab)

  6. High voltage packaging technology for wide bandgap power semiconductor devices

    cambridge

  7. High-power semiconductor laser arrays by metalorganic chemical vapor deposition

    Semiconductor injection lasers have the capability of producing very high output powers if a large array of diodes can be fabricated. The development of useful high power semiconductor lasers depends on fabrication processes which overcome the problems associated with high power laser operation. …

    uiuc Repository record for High-power semiconductor laser arrays by metalorganic chemical vapor deposition (opens in a new tab)

  8. Measuring Level of Degradation in Power Semiconductor Devices using Emerging Techniques

    … of time tends to deteriorate the health of power electronic switches. Being a key element in any high-power converter systems, power switches such as insulated-gate bipolar junction transistors (IGBTs) and metal-oxide semiconductor field-effect transistors (MOSFETs) are constantly monitored …

    umkc Repository record for Measuring Level of Degradation in Power Semiconductor Devices using Emerging Techniques (opens in a new tab)

  9. Technology for Planar Power Semiconductor Devices Package with Improved Voltage Rating

    The high-voltage SiC power semiconductor devices have been developed in recent years. They cause an urgent in the need for the power semiconductor packaging to have not only low interconnect resistance, less noise, less parasitic oscillations, improved reliability, and better thermal management, …

    vt Repository record for Technology for Planar Power Semiconductor Devices Package with Improved Voltage Rating (opens in a new tab)

  10. Double-Sided Liquid Cooling for Power Semiconductor Devices Using Embedded Power Technology

    Power electronics is a constantly growing and demanding technical field. Consumer demand and developing technologies have made the improvement of power density a primary emphasis of research for this area. Power semiconductors present some of the major challenges for increasing system level power

    vt Repository record for Double-Sided Liquid Cooling for Power Semiconductor Devices Using Embedded Power Technology (opens in a new tab)

  11. High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors

    … state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor transistors, including the MOSFET, BJT, SJT, and normally-on and normally-off JFETs. Both commercial and sample devices from the semiconductor industry's well-known manufacturers were evaluated in this study. These manufacturers …

    vt Repository record for High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors (opens in a new tab)

  12. Investigation of Power Semiconductor Devices for High Frequency High Density Power Converters

    The next generation of power converters not only must meet the characteristics demanded by the load, but also has to meet some specific requirements like limited space and high ambient temperature etc. This needs the power converter to achieve high power density and high temperature operation. It …

    vt Repository record for Investigation of Power Semiconductor Devices for High Frequency High Density Power Converters (opens in a new tab)

  13. Comparative Study of Power Semiconductor Devices in a Multilevel Cascaded H-Bridge Inverter

    … battery energy storage system (BESS) using SiC power MOSFETs and Si IGBTs. Two crucial performance drivers for inverter applications are power loss and efficiency. Both of these are investigated in this thesis. Power devices with similar voltage and current ratings are used in the same inverter …

    arkansas Repository record for Comparative Study of Power Semiconductor Devices in a Multilevel Cascaded H-Bridge Inverter (opens in a new tab)

  14. Spatial Mode Filters for Control of Lateral Modes in High Power Semiconductor Lasers

    … order modes. Stable single lateral mode output power is demonstrated in lasers over the entire range of drive currents tested when frustrating waveguide filters or frustrating scattering waveguide filters are incorporated into the devices. This improves the single lateral mode power output from …

    uiuc Repository record for Spatial Mode Filters for Control of Lateral Modes in High Power Semiconductor Lasers (opens in a new tab)

  15. Sintering of Micro-scale and Nanscale Silver Paste for Power Semiconductor Devices Attachment

    … the most important processes in the packaging of power semiconductor devices. The current die-attach materials/techniques, including conductive adhesives and reflowed solders, can not meet the advance of power conversation application. Silver paste sintering has been widely used in …

    vt Repository record for Sintering of Micro-scale and Nanscale Silver Paste for Power Semiconductor Devices Attachment (opens in a new tab)

  16. Novel MOS-gated bipolar device concepts towards a new generation of power semiconductor devices.

    Research in MOS-gated power semiconductor devices with combined bipolarlVIOS action has been motivated by the continuous industrial need for highly efficient devices with reduced power losses and high impedance gate control. The Insulated Gate Bipolar Transistor (IGBT) and the IVIOS Controlled …

    cambridge

  17. Thermal Characterization of Die-Attach Degradation in the Power MOSFET

    The thermal performance of the power MOSFET module is subject to change over its lifetime. This is caused by the growth of voids and other defects in the die-attach layer. The goal of this dissertation is to develop measurement techniques and finite element simulations that can measure the changes …

    vt Repository record for Thermal Characterization of Die-Attach Degradation in the Power MOSFET (opens in a new tab)

  18. MOS-bipolar composite power switching devices

    Two MOS-Bipolar composite power semiconductor switching devices are proposed and experimentally demonstrated. These devices feature high voltage and high current capabilities, fast switching speeds, simple gate drive requirements, savings in chip area, reverse bias second breakdown ruggedness and …

    vt Repository record for MOS-bipolar composite power switching devices (opens in a new tab)

  19. SiC-Based High-Frequency Soft-Switching Three-Phase Rectifiers/Inverters

    … to the current industry practice, with a power rating between 10 and 30 kW, the power density are limited by silicon (Si) power semiconductor devices, which make the systems operate at only up to around 30 kHz. The emerging wide bandgap (WBG) power semiconductor devices are considered as …

    vt Repository record for SiC-Based High-Frequency Soft-Switching Three-Phase Rectifiers/Inverters (opens in a new tab)

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