Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 72 for “"Polysilicon"”.
-
Losses in polysilicon waveguides
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.
-
Thermoelectric properties of polysilicon inverse opals
Nanostructured single-crystal silicon exhibits a remarkable increase in the gure of merit for thermoelectric energy conversion. Here we theoretically and experimentally(partial) investigate a similar enhancement for polycrystalline silicon structured as an inverse opal. An inverse opal provides …
-
Subcritical crack growth in polysilicon MEMS
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 1997.
-
Low loss polysilicon waveguides for silicon photonics
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1997.
-
Screening experiment for a polysilicon gate etch chamber
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1999.
-
Pattern dependencies in the plasma etching of polysilicon
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1994.
-
Characterization and modeling of polysilicon MEMS chemical-mechanical polishing
… Experiments were performed to characterize polysilicon MEMS CMP. A new test mask was created which contains test structures relevant to MEMS. Both single and dual material polish experiments were carried out and the resulting data fit against an adapted step height density model. Results …
-
Experimental Studies of Laterally Seeded Recrystallized Polysilicon on Silicon Dioxide
Single crystal silicon films have been grown on silicon dioxide covered silicon substrates by lateral epitaxy by seeded solidification using a scanned graphite strip heater.
-
Analysis of polysilicon critical dimension variation for submicron CMOS processes
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.
-
Feature profile evolution during the high density plasma etching of polysilicon
… integrated circuits - the plasma etching of thin polysilicon films used to form the metaloxide- semiconductor transistor gate. The etching of very small features (-0.25 jim) in the -2500 A thick films, performed at low operating pressures (-10 mTorr), must be accompanied with minimal etching …
-
Modeling of the plasma etching of polysilicon with chloro- and bromo-trifluoromethane discharges
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1986.
-
Modeling 0.18[m̳u̳]m BiCMOS (S18) high sheet resistance (RPH) polysilicon resistor lifetime drift
… in 0.18m BiCMOS high sheet resistance (RPH) polysilicon resistors. The circuit model was made using Cadence-Spectre and Verilog-A. The lifetime drift utility was written using Ocean scripting language.
-
Etching kinetics and surface roughening of polysilicon and dielectric materials in inductively coupled plasma beams
… angles. The angular etching yields of polysilicon and dielectric materials in Ar, C12/Ar, and C4F8/Ar plasma beams were studied as a function of ion bombardment energy, ion bombardment angle, etching time, plasma pressure, and plasma composition. Interestingly, the effective …
-
Effect of grain structure and doping on the mechanical properties of polysilicon thin films for MEMS
… Systems (MEMS) employ slender polysilicon flexures that are prone to failure due to large operating stresses. Polycrystalline silicon (polysilicon) films with improved mechanical properties to meet demanding applications could be engineered by modification of the material …
-
Study of plasma-surface kinetics and simulation of feature profile evolution in chlorine etching of patterened polysilicon
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1998.
-
Origin, evolution, and control of sidewall line edge roughness transfer during plasma etching
… a preliminary investigation into roughening of polysilicon in an HBr plasma beam. The initial polysilicon topography was shown to seed striation formation at glancing ion incident angles due to scattering and ion shadowing. These results indicate that, in a pure etching process (no deposition) …
-
Heavily doped bulk unipolar structures
… analysis. Minority carrier transport at the polysilicon - monosilicon interface is also studied in polysilicon emitter bulk unipolar diodes with the emphasis having been placed on the influence of heavy doping; the aim being the development of a useful predictive tool for the study of these …
-
A test structure for the measurement and characterization of layout-induced transistor variation
… Two pattern densities are chosen in our design: polysilicon density and shallow-trench isolation (STI) density. A test structure is designed to study the systematic spatial dependency between transistors in order to determine the impact of different variation sources on transistor characteristics …
-
Development of Next Generation of High Voltage Poly Crystalline Silicon Thin Film Transistors
… mainly focuses on development of next generation polysilicon high voltage TFTs for their potential use in display applications and in PICs where high voltage and low current arc a requirement. A study on high voltage SOI and SOS devices is also carried out to transfer the knowledge acquired from …
Page 1 of 4