Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 77 for “"OFF State"”.
-
Reducing Off-State Current in P-Type Metal Oxide Thin Film Transistors
… In previous work, it was shown that the high off-current associated with Cu<sub>2</sub>O TFTs may be attributed to an atypical minority-carrier electron current leakage in the off-state. This gives a focus for device improvement. Most research in this area has focused on material improvements …
-
Cu2O thin films for p-type metal oxide thin film transistors
… field-effect mobility and an unacceptably high off-state current that are a feature of devices that have been reported to date. This dissertation focuses on improving the carrier mobility, and identifying the main origins of the low field-effect mobility and high off-state current in Cu2O TFTs. …
-
Improving the Stability of Organic Field-Effect Transistors
… While much effort has been made to explain ON-state bias-stress instabilities in p-type materials (also known as negative bias stress) and to minimise their effects, not much has been done to address the OFF-state bias-stress instabilities (positive bias stress in p-type materials). In fact, …
-
Dynamics of adaptive recurrent neural networks
… in which one neuron switches between an ’off’ state, where it takes a negative value, and an ’on’ state, where it takes a positive value, while the other neuron stays in one on/off state. Then, by means of an example with a nine neuron network, the system is shown to exhibit both stable …
-
Investigation of Threshold Voltage Instability in Normally Off GaN on Si HEMT
… candidate for making power devices with lower on state resistance and higher frequency of operation. With the recent advances in epitaxial growth of GaN on Silicon (Si) substrates, AlGaN/GaN on Si High Electron Mobility Transistors (HEMT) have gained unprecedented commercial attention. Normally …
-
Targeted destruction of intracellular DNA using a CRISPR-based genetic device that can be carried indefinitely in the host genome
… the DNA target(s). The device is stable in the OFF state, with >98% of cells retaining a low-copy DNA target over the course of an 8-hr experiment. Upon DNAi activation, the target plasmid is lost from all but 1 in 10⁸ cells and there is a corresponding >10,000-fold decrease in the abundance of …
-
Towards Engineering and Understanding of Guest Host Interaction Between Dopants and Liquid Crystals in Liquid Crystal Displays
… response time of the cell between the on state and off state. By manipulating the physical properties we can exert specific control over the properties of the cell of particular importance in display applications is the speed with which cells can be turned between the on and off state; …
-
Reversible electrical breakdown in amorphous chalcogenides
… with particular attention being paid to the on-state properties of Si12 Te48As30Ge10 glass threshold switches. Apparatus is described for the preparation of well-characterised materials and flash-evaporated thin-film switching devices. Measurements have been made of the current-voltage …
-
On the Analysis, Design, and Modeling of Electrostatic Discharge Protection Devices for Analog and Radio -Frequency Integrated Circuits
… we also model accurately the small-signal off-state impedance of the device using s-parameter measurements, for inclusion in RF circuit simulations. Experimental results are provided for silicon and SiGe npn transistors.
-
Carbon nanotube-based nanorelays for low-power circuit applications
… nanoelectromechanical switch that has no off-state leakage current. This switch, called a nanorelay, is a mechanical switch that uses a carbon nanotube as the active component. The device consists of a line of carbon nanotubes grown on a highly-doped silicon substrate between two contacts …
-
Physical Modeling of Graphene Nanoribbon Field Effect Transistor Using Non-Equilibrium Green Function Approach for Integrated Circuit Design
… Technology Roadmap for Semiconductors (ITRS) states the end of Moore’s law in the next decade due to the scaling challenges of silicon-based CMOS electronics, e.g. extremely high power density. The forward-looking solutions are the utilization of emerging materials and devices for integrated …
-
AlGaN/GaN HFET with composite 'slow/fast' gate
… of these switches is limited by the finite off state capacitance COFF, mainly due to a small gate-channel separation. In the conventional design, when the device is in the off state, the 2DEG is depleted only under the gate, which gives rise to substantial channel-gate coupling and hence …
-
High-Performance Gateless Iii-Nitride Microwave Switches
… relatively high ohmic contact resistivity, large OFF-state capacitance, and difficulty in gate alignment limit HFET's application for RF switching to frequencies not exceeding 6 GHz. In this dissertation, a new type of gateless microwave switch using capacitively-coupled contact (C3) is presented, …
-
A Sub-0.1-Micron PtSi Schottky Source/drain MOSFET
… at low voltages. These devices exhibit on-state currents of 200-400 $\mu$A/$\mu$m and on-off ratios of 20 to 50. Cryogenic refrigeration of the devices reduce the off-state leakage current by several orders of magnitude.
-
Atomic layer deposition Al2O3-passivated AlGaN/GaN high-electron-mobility transistors on Si(111) towards reliable high-speed electronics
… measured high Schottky gate leakage current and OFF-state drain current are believed to be responsible for the large subthreshold swing and low drain current on/off ratio. A passivation-last process followed by post-metallization annealing is then utilized, which largely reduces the reverse …
-
InGaAs Quantum-Well MOSFETs for logic applications
… future logic. A particularly important one is OFF-state leakage. For the first time, this work has unambiguously identified band-to-band tunneling (BTBT) amplified by a parasitic bipolar effect as the cause of excess OFF-state leakage current in these transistors. This finding has important …
-
Various pushing methods on grid graphs
… if a grid of switches can be turned into all-off state from any initial configuration by various methods of activation operation (push). Among these push methods, besides the regular "+" push, "+" push with no center, "X" push, "X" push with no center, and a "V"-typed unbalanced push are …
-
Analysis, design, fabrication, and testing of a MEMS switch for power applications
… to higher system-level design. Achievable off-state standoff voltages of a switch cell are investigated through experimental measurements of electrical breakdown in micron-sized air gaps. Breakdown voltages exceeding 300 V are demonstrated across clean air gaps as small as 0.5 pm. Based on …
-
Silicon on Ferroelectric Insulator Field Effect Transistor (SOFFET): A Radical Alternative to Overcome the Thermionic Limit
… increases short-channel-effect (SCE), and off-state current makes it difficult for the industry to follow the well-known Moore’s Law with bulk devices. Therefore, scaling planar MOSFET is no longer considered as a feasible solution to extend this law. The down-scaling of …
-
Energy efficient computing : from nanotubes to negative capacitance
… are unfortunately often subject to substantial off-state leakage current (/OFF) which results in increased leakage power and potential incorrect logic functionality. Therefore, to realize the potential benefits of these new nanomaterials (and the new opportunities they enable), practical …
Page 1 of 4