Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 120 for “"Metallization"”.
-
Copper metallization with an electron cyclotron resonance
… results suggest that one formula for successful metallization is the use of an etch-resistant dielectric material in conjunction with large negative surface bias.
-
Thin Film Metallization and Protective Top-Coat Development
This research involved an investigation to find an alternative technology to chrome plating. The proposed system used a plastics substrate, a metalized layer, and a protective top-coat. The interfaces between the layers are the challenges and thus various experiments are conducted to examine the …
-
Planar metallization failure modes in integrated power electtonics modules
… into planar power modules by using planar metallization, which is a technology involving electrical, mechanical, material, and thermal issues. By processing high dielectric materials, magnetic materials, or silicon chips using compatible manufacturing procedures, and by carefully designing …
-
Chemical vapor deposition of thin films for ULSI interconnect metallization
… chemical vapor deposition (CVD) for interconnect metallization using solution delivery of Cu(hfac)2 (Cu(II) hexafluoroacetyl-acetonate) dissolved in isopropanol. We observe a growth rate of 17.7 „b 1.5 nm/min at reference conditions of 300„aC substrate temperature, 0.025 Torr Cu(hfac)2 partial …
-
Development of the gel plating process for selective gold metallization
A Gel Plating Process for selective gold metallization was developed in this thesis. The Gel Plating Process selectively plates metal on catalytic features without exposing sensitive area, of the substrate surface to a corrosive plating bath. This process utilizes an electroless plating bath and …
-
Adherence/Diffusion Barrier Layers for Copper Metallization: Amorphous Carbon:Silicon Polymerized Films
… Spectroscopy was used to characterize Cu metallization of these a-Si:C:H films. XPS revealed substantial Cu wetting of a-Si:C:H/OH and a-Si:C:H/OH/N films and some wetting of a-Si:C:H/N films, and similar Cu diffusion inhibition to 800 K by all of the a-:S:C:H films. These findings suggest …
-
Laser Metallization And Doping For Silicon Carbide Diode Fabrication And Endotaxy
… With the aim of overcoming some challenges in metallization and doping during the fabrication of silicon carbide devices, a novel laser-based process is provided to direct metallize the surface of silicon carbide without metal deposition and dope in silicon carbide without high temperature …
-
Analysis of Bimetallic Adhesion and Interfacial Toughness of Kinetic Metallization Coatings
… and thermal protection, among others. Kinetic Metallization (KM), a solid-state impact consolidation and coating process, is well-suited for depositing industrial coatings due to its versatility, low substrate heat input, and low cost. The ability of KM coatings to adhere to the substrate is …
-
Effect of metallization on electrical performance of surface acoustic wave resonators
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.
-
Development of a selective substrate metallization process via electorless gel plating
… expansion coefficient very close to silicon. Metallization is used to generate areas for wire and die bonding and to form corrosion barriers for underlying metals. Plating is one metallization process which immerses the component to be coated into a chemical medium. The plating baths usually …
-
Modeling of pattern dependencies in the fabrication of multilevel copper metallization
Multilevel copper metallization for Ultra-Large-Scale-Integrated (ULSI) circuits is a critical technology needed to meet performance requirements for advanced interconnect technologies with sub-micron dimensions. It is well known that multilevel topography resulting from pattern dependencies in …
-
Selective metallization and electronic self-healing for high performance carbon-based nanoelectronics
… high resistances in order to enable selective metallization and self-healing in CNT and graphene based devices. First, we investigate a method to reduce the high CNT junction resistance through a nanoscale chemical vapor deposition (CVD) process. We show that by passing current through the CNT …
-
High Temperature SiC Embedded Chip Module (ECM) with Double-sided Metallization Structure
… balanced structure with double-sided metallization layers and material CTE match in the structure. Thermal and thermo-mechanical analysis on an ECM is then used to demonstrate the benefits on the cooling system, and to study the material and structure for reducing the thermally induced …
-
Thermo-Mechanical Reliability and Electrical Performance of Indium Interconnects and Under Bump Metallization
… analysis of indium interconnects and Under Bump Metallization (UBM) in flip chip devices. Flip chip assemblies with the use of bump interconnections are frequently used, especially in high density, three-dimensional electronic devices. Currently there are many methods for interconnect bumping, …
-
Effects of mechanical properties on the reliability of Cu/low-k metallization systems
Cu and low-dielectric-constant (k) metallization schemes are critical for improved performance of integrated circuits. However, low elastic moduli, a characteristic of the low-k materials, lead to significant reliability degradation in Cu-interconnects. A thorough understanding of the effects of …
-
Metallization Process for 3D Printed Electronics: from i3DP II to 3D Co-printing Technology
… serve as active seeds to assist the following metallization process. Naturally derived polyphenols are also integrated into 3D printing resins, providing the customized resin with the capability of metallization, along with other functional properties development. Through secondary reactions, …
-
Comparison of high power impulse magnetron sputtering and modulated pulsed power sputtering for interconnect metallization
… seed layers in the state of the art interlevel metallization process. As the critical dimension keeps shrinking, it has become increasingly difficult to use the current techniques to form thin, continuous and stable barrier/seed layers, and more likely to form void during the following process …
-
Development of the recess mounting with monolithic metallization optoelectronic integrated circuit technology for optical clock distribution applications
Recess mounting with monolithic metallization, or RM3 integration, is used to integrate Ino.47Ga0.53As/InP based lattice-matched high quantum efficiency p-i-n photodetectors on silicon chips to build high performance optoelectronic integrated circuits [1]. In RM3 integration, partially processed …
-
Degradation modes of the top-side contacting of SiC power semiconductors
… modules (aluminum bond wires, aluminum metallization) and copper modules (copper bond wires, copper metallization)—were designed, fabricated, and tested using active power cycling. Modules were subjected to varying temperature cycles (110 - 170 Kelvin) under two environmental conditions: …
-
Microstructural analysis of plasticity in low-load contact damage of silicon and germanium
… forms under the indenter from a pressure-induced metallization of the semiconductor (Mott transition). A metastable amorphous phase is formed when the pressure on the metallic phase drops as the indenter is lifted from the surface. This amorphous phase makes up the indentation interior and the …
Page 1 of 6