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Showing 1 to 20 of 20 for “"MOS capacitors"”.
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Hysteresis and memory effects in nanocrystal embedded MOS capacitors
… embedded metal-oxide-semiconductor (NC-MOS) capacitors, the fundamental components of the nanocrystal memory. Various properties of the NC-MOS capacitors including gate stack composition, oxide charge storage and interface traps are studied by making high frequency and quasi-static …
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Experimental Investigations of the Electronic Properties of the Oxidized Silicon Surface Using Mos Capacitors
Made available in DSpace on 2014-12-08T22:24:10Z (GMT). No. of bitstreams: 1 6711833.pdf: 2934091 bytes, checksum: 65888ef8e8b582129046f8cd5656308b (MD5) Previous issue date: 1967
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N-polar n-GaN MOSCAP and Tunnel Junctions Toward p-GaN MOSCAP
… in the context of experimentally fabricated MOS capacitors on n-type GaN (000), utilizing dielectric materials grown by plasma-enhanced atomic layer deposition. Additionally, this thesis presents findings from the 1st and 2nd generation GaN homojunction tunnel diodes, contributing to the …
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Electrical characterization of thin film nanostructure templates
… and safety to focus on volume production. MOS capacitors created with the system are analyzed with capacitance-voltage measurement techniques to provide insight into device operation. Ni is deposited into porous alumina templates to create Ni nanostructures.
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Structural, electrical and optical studies on the effects of rapid thermal processing on silicon-germanium-carbon films
… interface. Electrical characterization on MOS capacitors demonstrated rather poor interface properties and substrate degradation. Ge pile-up and C residues were the main causes of the observed fixed charge and interface state density, while SiC precipitate was related to the substrate …
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HfO2 as gate dielectric on Si and Ge substrate
… complementary metal-oxide-semiconductor (CMOS) devices since it provides the required capacitance at the reduced device size because of its high dielectric constant. HfO_2 films are currently deposited by various techniques. Many of them require high temperature annealing that can impact …
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The Trapped Charge Interfacial Modulation of the Electron Beam Induced Current in Metal Oxide Semiconductor Capacitors
Radiation-hardened (15) MOS capacitors were fabricated on 1-10 ohm-cm, p-type 100 silicon and were placed in the focal plane of a scanning electron microscope (SEM) to selectively populate and generate the oxide traps. As the electron beam scans from a region of the MOSC in the WRITE state to a …
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Nonvolatile memory devices with colloidal, 1.0 nm silicon nanoparticles : principles of operation, fabrication, measurements, and analysis
… density, low-voltage nonvolatile memory devices. Most previous works have studied nanoparticles of larger than 5 nm size and exhibited bulk-like trapping characteristics. Technologically viable and competitive future devices, however, will require nanoparticles of sub 3-nm dimensions; a …
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Fabrication of capacitors based on silicon nanowire arrays generated by metal-assisted wet chemical etching
Capacitors with high capacitance density (capacitance per footprint area) have potential applications in autonomous microsystems that harvest energy from the environment, as they can store and release energy at high rates. Use of high surface-to-volume ratio structures has been demonstrated as an …
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Computational modeling of defects in nanoscale device materials
… behaviour in III-V metal-oxidesemiconductor (MOS) capacitors. In addition, the formation energetics and electron scattering properties of point defects in carbon nanotubes (CNTs) are studied using DFT in conjunction with Green’s function based techniques. The latter are applied to evaluate the …
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Processing random signals in neuroscience, electrical engineering and operations research
… dynamics of ultra-thin metal oxides in MOS capacitors, and molecular motors in nanotechnology, thereby establishing a rich agenda for future research.</p>
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Using Synthetic Nanopores for Single -Molecule Analyses: Detecting SNPs, Trapping DNA Molecules, and the Prospects for Sequencing DNA
… membranes formed from metal-oxide-semiconductor (MOS) capacitors; and finally, and (4) compensating for the capacitance through external circuitry.
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Heteroepitaxial Ge on Si via High-Bandgap III-V Buffers for Low-Power Electronic Applications
… based complementary metal-oxide-semiconductor (CMOS) transistors has resulted in an exponential increase in device density, and thus an exponential increase in computing power. Increasing transistor density also results in increasing total power consumption and thus, necessitates supply voltage …
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Study of Si/SiO2 interface passivation and SiO2 reliability on deuterium implanted silicon
… the dangling bond, which degrades performance of MOS devices. Passivation of these bonds with hydrogen had been found to diminish their effect but the improvement degrades the operation due to hot electron effect. Passivation with deuterium annealing has proven to improve the lifetime of the metal …
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Hybrid-gate deep depletion mosfet high-k zro2/diamond-based power devices
… with smaller bandgap) make diamond the most suitable material for high temperature operation. The most widely used device whether in analog or digital circuits in the Electronic Industry is the metal-oxide-semiconductor field effect transistor (MOSFET). The focus will therefore be on …
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Electrical characterization of high-k gate dielectrics for advanced CMOS gate stacks
… dielectric quality of metal oxide semiconductor (MOS) gate stack structures are critical to future CMOS technology. As SiO_2 was replaced by the high-k dielectric to further equivalent oxide thickness (EOT), high mobility substrates like Ge have attracted increasing in replacing Si substrate to …
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Thin Oxide MOS Capacitor Studies of Fast Surface States
Submitted by Jesse Garrison (jagarris@illinois.edu) on 2011-07-07T20:53:31Z No. of bitstreams: 1 1971_hunter.pdf: 3687418 bytes, checksum: 4c2047e94e889148dd27584ccd2621a8 (MD5)
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Reliability Studies of TiN/Hf-Silicate Based Gate Stacks
… of high-[Kappa] gate stacks in nano-scale CMOS technology because of their distinct advantages as far as thermal stability, leakage characteristics, threshold stability and low mobility degradation are concerned. Their reliability, which is limited by trapping at pre-existing and stress …
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A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes
… the properties of n+ polycrystalline-Si/SiO2/Si capacitors and MOSFETs have been investigated. Flat-band voltages (Vfb ) and substrate doping concentrations ( NA ) calculated from high frequency C-V curves of the capacitors were not dependent on the doses of Hf. Also, electron channel mobility …
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Experimental investigation of carrier mobility degradation in metal oxide semiconductor field effect transistors of high permittivity gate dielectrics
… based Metal-Oxide- Field Effect Transistors (MOSFETs). SiO2 is therefore expected to be replaced in future technologies with alternative dielectrics. Several dielectrics with high dielectric constants (high-κ) are being studied as candidates for integration into transistors. It is desirable …