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Showing 1 to 17 of 17 for “"Large Area Electronics"”.

  1. Low temperature lithographically patterned metal oxide transistors for large area electronics

    … semiconductors are a promising candidate for large-area electronics technologies that require lightweight, temperature-sensitive flexible substrates. Because these thin films retain relatively high carrier mobilities even in an amorphous state, metal oxide-based field effect transistors (FETs) …

    mit Repository record for Low temperature lithographically patterned metal oxide transistors for large area electronics (opens in a new tab)

  2. Low-Temperature Silicon Thin Films for Large-Area Electronics: Device Fabrication Using Soft Lithography and Laser-Crystallization by Sequential Lateral Solidification

    Made available in DSpace on 2015-09-25T20:52:35Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3030441.pdf: 4345292 bytes, checksum: 73b405cc08fda9ba4c40258bb636c0cf (MD5) Previous issue date: 2001

    uiuc Repository record for Low-Temperature Silicon Thin Films for Large-Area Electronics: Device Fabrication Using Soft Lithography and Laser-Crystallization by Sequential Lateral Solidification (opens in a new tab)

  3. Near room temperature lithographically processed metal-oxide transistors

    … the fabrication of devices for low-cost, large-area electronics.

    mit Repository record for Near room temperature lithographically processed metal-oxide transistors (opens in a new tab)

  4. Deposition of p-type metal oxide semiconductors for large-area electronic display and solar cell applications

    … on improved flexibility and form factor. Current large-area electronics is still dominated by silicon based technologies, which, with their relatively low performance, limits the advance and development of both the display and solar cell industries. This has led to the development of alternative …

    cambridge Repository record for Deposition of p-type metal oxide semiconductors for large-area electronic display and solar cell applications (opens in a new tab)

  5. A multi-process reactor for thin film transistor fabrication at low temperatures

    … of applications including, flat panel displays, large area electronics and 3D integrated circuits. This thesis describes advances made in the technology for the fabrication of TFT's. A Multi-Process reactor has been designed to produce device quality layers on Coming 1733 glass substrates, which …

    qu-belfast Repository record for A multi-process reactor for thin film transistor fabrication at low temperatures (opens in a new tab)

  6. Fabrication and qualification of arbitrarily patterned seamless tooling for continuous roll-to-roll microcontact printing

    … photovoltaic systems and accessories, and other large area electronics could be fabricated using a continuous roll-to-roll microcontact printing process. This work builds on existing research in fabricating seamless cylindrical PDMS stamps (tools) for microcontact printing using laser …

    mit Repository record for Fabrication and qualification of arbitrarily patterned seamless tooling for continuous roll-to-roll microcontact printing (opens in a new tab)

  7. The bias-stress effect in pentacene organic thin-film transistors

    … transistors (OTFTs) are promising for flexible large-area electronics. However, the bias-stress effect (BSE) in OTFTs causes operational instability that limits the usefulness of the OTFT technology in a wide range of circuit applications. Currently, most existing studies on OTFT BSE are …

    mit Repository record for The bias-stress effect in pentacene organic thin-film transistors (opens in a new tab)

  8. Polycrystalline Silicon TFTs for Large Area Electronic Application

    … high voltage Thin Film Transistors (TFTs) for large area flat panel displays and the related physical phenomena. All TFT samples in this work were fabricated using a low temperature, glass compatible poly-Si technology. Extensive numerical simulation and experimental work has been carried out …

    de-montfort Repository record for Polycrystalline Silicon TFTs for Large Area Electronic Application (opens in a new tab)

  9. Cu2O thin films for p-type metal oxide thin film transistors

    … CMOS circuits which enable low power consumption large-area electronics. Cuprous oxide (Cu2O) has previously been proposed as a suitable active layer for p-type metal oxide TFTs. The two most significant challenges for achieving good quality Cu2O TFTs are to overcome the low field-effect mobility …

    cambridge Repository record for Cu2O thin films for p-type metal oxide thin film transistors (opens in a new tab)

  10. Novel Thin Film Nanogap Device Fabrication And 3D Integration Enabled By Adhesion Lithography

    … increasing demand for transparent and flexible electronics/large-area electronics (LAE) due to the rapid growth of the Internet of Things (IoT) in recent decades. New materials, such as organic semiconductors, amorphous/nanocrystalline materials, metal oxides, and 2-dimensional/3-dimensional …

    cambridge Repository record for Novel Thin Film Nanogap Device Fabrication And 3D Integration Enabled By Adhesion Lithography (opens in a new tab)

  11. Reducing Off-State Current in P-Type Metal Oxide Thin Film Transistors

    … and communicate information as nodes in a large network of information. This diverse application system is a growing interest for many industries. Large Area Electronics (LAE) is required to effectively produce the mass quantity of small, low-profile devices that will be embedded in these …

    cambridge Repository record for Reducing Off-State Current in P-Type Metal Oxide Thin Film Transistors (opens in a new tab)

  12. First principles simulation of amorphous silicon bulk, interfaces, and nanowires for photovoltaics

    … many technologies, with major applications in large area electronics: displays, image sensing and thin film photovoltaic cells. This technology development has occurred because amorphous silicon is a thin film semiconductor that can be deposited on large, low cost substrates using low …

    cork Repository record for First principles simulation of amorphous silicon bulk, interfaces, and nanowires for photovoltaics (opens in a new tab)

  13. Self-Aligned Fabrication of Nanogap Based Zinc Oxide Nanowire Schottky Devices Using Adhesion Lithography

    … beam lithography. To fabricate nano devices on a large scale, this work focuses on combining bottom-up nanowire growth with nanogap fabrication using adhesion lithography (A-Lith); a technique for producing coplanar nanogaps with a spacing of less than 10 nm to tens of nanometers. A-Lith uses …

    cambridge Repository record for Self-Aligned Fabrication of Nanogap Based Zinc Oxide Nanowire Schottky Devices Using Adhesion Lithography (opens in a new tab)

  14. The Hall Effect for Probing Conjugated Polymer Charge Transport in High Carrier Density Regimes

    … opening up the possibilities promised by large area electronics manufacturing. Probing charge transport in these materials often proves difficult. Hall effect mea- surements, a mainstay of semiconductor characterisation in more traditional materials, provide anomalous results when used on …

    cambridge Repository record for The Hall Effect for Probing Conjugated Polymer Charge Transport in High Carrier Density Regimes (opens in a new tab)

  15. Quantitative Extraction of Bias Stress Parameters in Thin Film Transistors

    … and are finding applications in emerging areas of large-area electronics, such as logic. A key limitation of the practical applications of TFTs is their inherent instability under bias stress. The two leading semiconducting TFT materials for displays, hydrogenated amorphous silicon …

    cambridge Repository record for Quantitative Extraction of Bias Stress Parameters in Thin Film Transistors (opens in a new tab)

  16. Bipolar metal oxide thin film diodes

    … devices, a current-driven switch with larger current capability and higher frequency operation will prove to be beneficial. The growth of the Internet of Things (IoT) also results in increasing demand for transparent and conformable electronics, which requires materials that are highly …

    cambridge Repository record for Bipolar metal oxide thin film diodes (opens in a new tab)

  17. Interfacial Studies of Organic Field-Effect Transistors

    … transistors (OFETs) are potential components for large-area electronics because of their attractive advantages: light weight, cost-effective and large-area processability, flexibility and resonable performance potential. However, the commercialization of OFETs faces several technical obstacles. …

    columbia-diss Repository record for Interfacial Studies of Organic Field-Effect Transistors (opens in a new tab)