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Showing 1 to 20 of 55 for “"InSb"”.
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Nanoscale characterization of InSb/InAs novel functional semiconductor nanostructures for LEDs / Caracterización a nanoescala de nanoestructuras funcionales novedosas de InSb/InAs para LEDs
… efficiency. Among various III-V epitaxial QDs, InSb/InAs QDs emit light at the mid-infrared (MIR) range (3-5 µm) through the tuning of Sb composition and as a result, these QDs can be used to detect various hazardous gases with MIR signatures, among other applications. In this framework, the …
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Modeling of electroluminescence in InSb quantum wells and inversion asymmetric effects
… on unpolarized spectral emittance from several InSb/AlxIn1-xSbquantum wells. We do that using slightly novel procedure and identify several transitions unreported in InSb/AlxIn1-xSb material system up to now. In simplified models these are regarded as forbidden. We show that in 8 band EFA model …
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Magnetooptical studies of small-gap semiconductors : Hg₁₋ Cd Te and InSb
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Physics, 1977
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Electrical injection and detection of spin polarization in InSb/ferromagnet nanostructures
… detection of spin injection and transport in InSb/CoFe heterostructures. As a narrow gap semiconductor, InSb has a high mobility and strong spin-orbit interaction. Using ferromagnetic CoFe, lateral InSb/CoFe devices are fabricated by semiconductor processing techniques. The saturation …
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Time Resolved Spectroscopy in InAs and InSb based Narrow-Gap Semiconductors
… carrier and spin relaxation dynamics in InAs and InSb based narrow-gap semiconductors is crucial to understand the different scattering mechanisms related to the systems. Similar studies in InSb quantum wells are also intriguing, especially for their scientifically unique features (such as small …
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Core-level photoemission investigations of the CDTE(100) and INSB(100) surface and interfacial structures
… the zinc-blende semiconductor materials CdTe and InSb. Several interfacial systems involving the surfaces of these materials were also studied, including the CdTe(lOO)-Ag interface, the CdTe(lOO)-Sb system, and the InSb(lOO)-Sn interface. High-energy electron diffraction was also employed to …
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Magnetic field reversal effect in inter-Landau level absorption and simulated spin-flip Raman scattering in n-type InSb
… of inter-Landau level transitions in n-type InSb. Three main topics are considered: (i) The first observation was made of a magnetic field reversal effect in a spin-conserving inter-Landau level absorption transition. (ii) Advancements were made in the theory of intraband absorption and …
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An evaluation of indium antimonide quantum well transistor technology
… high electron mobility of Indium Antimonide (InSb), researchers have seen great potential to use this new material in high switching speed and low power transistors. In Dec, 2005, Intel and its partner, QinetiQ, Ltd, announced 85nm gate length enhancement and depletion mode InSb quantum well …
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Molecular beam epitaxial growth and characterization of indium antimonide on gallium arsenide
… beam epitaxial growth and characterization of InSb on GaAs substrates. The growth conditions and mechanisms of this highly lattice-mismatched system are detailed. Structural, electrical, and optical properties of the InSb epilayers are characterized by transmission electron microscopy (TEM), …
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Probe of Coherent and Quantum States in Narrow-Gap Based Semiconductors in the Presence of Strong Spin-Orbit Coupling
… ferromagnetic structures, InMnSb, as well as InSb films and InSb/AlInSb quantum wells. The emphasis was on dynamical aspects such as charge and spin dynamics in order to address several important issues of the spin-related phenomena. The objectives in this project were to: 1) understand …
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Engineering superconductivity in ballistic semiconductor nanowires
… on realizing nanowire quantum point contacts in InSb nanowires. In previous experiments on proximitized nanowires, a disordered, quantum localized region of a nanowire was used to probe conductance signatures of Majorana modes. However, the disordered behavior in the probe region complicates the …
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Core-Level Photoemission Investigations of the Cadmium-Telluride(100) and Indium-Antimony(100) Surface and Interfacial Structures
… the zinc-blende semiconductor materials CdTe and InSb. Several interfacial systems involving the surfaces of these materials were also studied, including the CdTe(100)-Ag interface, the CdTe(100)-Sb system, and the InSb(100)-Sn interface. High-energy electron diffraction was also employed to …
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Nanoscale Semiconductor Materials and Devices Employing Hybrid 1D and 2D Structures for Tunable Electronic and Photonic Applications
… as well as thermoelectric applications. InSb, being the bulk semiconductor with lowest bandgap, highest mobility, low effective mass, and highest spin–orbit coupling has potential of providing numerous novel applications. Also, InSb in nanowire form has not been explored in many aspects. …
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Some transport properties of the indium antimonide/nickel antimonide eutectic system
The eutectic InSb-NiSb system was found by Wilhelm and Weiss to containundirectionally orientated inclusion rods of NiSb in a matrix of InSb .The Hall coefficient , electrical conductivity and magnetoresistance havebeen investigated from 77°K to 6500K, while thermo-electric power and …
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