Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 16 of 16 for “"Gate current"”.
-
Leakage gate current in a heterostructure field effect transistor
A theoretical formulation for the leakage gate current in a heterostructure insulated-gate field effect transistor (HIGFET) is presented. Three important components of the leakage gate current, namely 2-D tunneling, 3-D tunneling and thermionic emission current, are considered. The conduction band …
-
Gate current modeling of tunneling real-space transfer transistor with negative differential resistance
In this project, the modeling of gate current is introduced to obtain a negative differential resistance (NDR) on a dual-channel tunneling real-space transfer transistor (TRSTT). The device was fabricated on a GaAs (100) substrate with a GaAs/InGaAs/GaAs straddling heterostructure. According to the …
-
Degradation of GaN High Electron Mobility Transistors under high-power and high-temperature stress
… two sequential degradation mechanisms where the gate current degrades first and saturates only after which the drain current shows significant degradation. A study of the semiconductor surface of delaminated degraded devices shows formation of grooves and pits at the gate edge on the drain side. …
-
Gate-geometry Dependence of Enhancement-mode p-GaN Gate High Electron Mobility Transistors
… power electronics is the enhancement-mode p-GaN Gate High Electron Mobility Transistor (HEMT) which matches the power, voltage, and efficiency of conventional GaN FETs but most importantly features a positive threshold voltage. This is achieved by the insertion of a Mg-doped GaN layer above the …
-
Degradation study of AIGaN/GaN HEMT through electro-thermo-mechanical calculations and thermo-reflectance measurements
… correlation between the critical voltages of the gate current degradation and the lattice temperature distributions of these devices under the reverse-gate-bias reliability testing. In addition, we have compared the numerical results of our simulations with DC measurements and high resolution …
-
Reliability of GaN high electron mobility transistors on silicon substrates
… in a wide scale. In this study, we have investigated the reliability of GaN HEMTs grown on Si substrates. The large lattice and thermal mismatch between GaN and Si adds an additional reliability concern as compared to conventional substrates such as SiC and sapphire. We have performed systematic …
-
Physics of electrical degradation in GaN high electron mobility transistors
… transistors (HEMT) in RF power applications is currently bottlenecked by their limited reliability. Obtaining the required reliability is a difficult issue due to the high voltage of operation. In order to improve reliability, it is essential to develop detailed physical understanding of the …
-
Gate leakage variability in nano-CMOS transistors
Gate leakage variability in nano-scale CMOS devices is investigated through advanced modelling and simulations of planar, bulk-type MOSFETs. The motivation for the work stems from the two of the most challenging issues in front of the semiconductor industry - excessive leakage power, and device …
-
MOSFET Current Source Gate Drivers, Switching Loss Modeling and Frequency Dithering Control for MHz Switching Frequency DC-DC Converters
… in this thesis. The first contribution is a new current source gate drive circuit for power MOSFETs. The circuit provides a nearly constant gate current to reduce switching transition times and therefore switching loss in power MOSFETs. In addition, it can recover a portion of the gate energy …
-
Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs
… by an electrochemical cell formed at the gate edge where gate metal, the II-N surface and the passivation layer meet. Moreover, the permanent decrease of the drain current is directly linked with the formation of the surface pits, while the permanent increase of the gate current is found …
-
Residual Stress Effects on Power Slump and Wafer Breakage in GaAs MESFETs
… phenomenon known as 3power slump2, and investigate the role of device processing on wafer breakage. All three objectives were successfully met. The single crystal stress technique uses a least squares analysis of X-ray diffraction data to calculate the full stress tensor. In this way, precise …
-
Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability
… When the oxide is scaled down to less than 3 nm, gate oxide breakdown (BD) often takes place. As a result, oxide trapping and interface generation cause long term performance drift and related reliability problems in devices and circuits. The RF front-end circuits include low noise amplifier …
-
A Constant ON-Time 3-Level Buck Converter for Low Power Applications
… the buck converter. This thesis research investigated the first stage converter of a car black box to provide power to a microprocessor, camera, and several other peripherals. The input voltage of the converter is 12 V, and the output voltage is 5 V with the load range being 20 mA (100 mW) to …
-
Characterization of high-k layers as the gate dielectric for MOSFETs
As the gate oxide thickness of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is continuously scaled down with lateral device dimensions, the gate leakage current during operation increases exponentially. This increase in leakage current raises concerns regarding power consumption …
-
Intentional and Unintentional Light Emission Diode in Power Electronics applications
… of view. In fact, the driver controls the input current of the LED light bulb that must be compliant with the standards and regulations concerning currents harmonic. Furthermore, the whole lighting system must meet the standards. In this perspective, a sufficient power factor (PF) must be …