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Showing 1 to 20 of 42 for “"GaN devices"”.
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AlGaN/GaN Dual Channel HFETs and Realization of GaN Devices on different substrates
GaN-based HFETs demonstrate ubiquitous high power and high frequency performance and attract tremendous research efforts. Even though significant advances have been achieved, there still exist some critical issues needed to be investigated and solved. In particular, high defect densities due to …
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Experimental Evaluation of Medium-Voltage Cascode Gallium Nitride (GaN) Devices for Bidirectional DC–DC Converters
… (WBG) semiconductors, such as gallium nitride (GaN) and silicon carbide (SiC), exhibit superior physical properties and demonstrate great potential for replacing conventional Si semiconductors with WBG technology, pushing the boundaries of power devices to handle higher switching frequencies, …
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Output Capacitance Loss Measurement and Validation for Low-Voltage Silicon and GaN Devices in DC-DC Converter Applications
… this hysteresis loss for a variety of power devices like SI and GaN. It is reported that only channel turn-off losses exist in devices with ZVS transition, however, we found that the charging and discharging of COSS is not loss-free and thus it is important that we account for this loss in …
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DEVELOPMENT OF HIGH-EFFICIENCY POWER DISTRIBUTION ARCHITECTURES BASED ON GAN DEVICES FOR THE LIQUID ARGON CALORIMETER ATLAS EXPERIMENT AT THE LHC
… Band Gap (WBG) materials like gallium nitride (GaN) are also employed in place of traditional silicon. GaN devices possess inherent benefits of increased efficiency, reduced conduction and switching losses, better thermal management, and better radiation hardness. All these are precious features …
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High Frequency GaN Characterization and Design Considerations
… at substantial cost. The use of gallium nitride devices is gathering momentum, with a number of recent market introductions for a wide range of applications such as point-of-load (POL) converters, off-line switching power supplies, battery chargers and motor drives. GaN devices have a much lower …
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GaN Device Characterization, Converter Optimization and Development for Enhanced Aviation Systems
GaN device is one of the most promising candidates in high-efficiency and high-density power conversion applications. Due to the low ON-Resistance GaN devices are widely adopted in various soft-switching converters. Based on superior Baliga's Figure of Merit, GaN devices also have advantages over …
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Design and Implementation of a Multiphase Buck Converter for Front End 48V-12V Intermediate Bus Converters
… of the converter. Wide-bandgap semiconductor devices are becoming more popular in commercial products and gallium nitride (GaN) devices are able to push the switching frequency higher without sacrificing efficiency. GaN devices can shrink the size of the converter and provide better efficiency …
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Modeling and Electrical Characterization of Ohmic Contacts on n-type GaN
As the current requirements of power devices are moving towards high frequency, high efficiency and high-power density, Silicon-based devices are reaching its limits which are instigating the need to move towards new materials. Gallium Nitride (GaN) has the potential to meet the growing demands due …
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High Frequency, High Power Density GaN-Based 3D Integrated POL Modules
… its theoretical limits. The recently emerged GaN transistors as a possible candidate to replace silicon devices in various power conversion applications. GaN devices are high electron mobility transistors (HEMT) and have higher band-gap, higher electron mobility, and higher electron velocity …
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Wide Bandwidth Control Electronics For Gan-Based Pebbs
… III-Nitride semiconductor materials (such as GaN) has been driven by the unique properties of these materials, such as high electron mobility, high saturation velocity, high sheet-carrier concentration at hetero-junction interfaces, high breakdown voltages, etc. These properties make the use …
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GaN-Based High-Efficiency, High-Density, High-Frequency Battery Charger for Plug-in Hybrid Electric Vehicle
This work explores how GaN devices and advanced control can improve the power density of battery chargers for the plug-in hybrid electric vehicle. Gallium nitride (GaN) devices are used to increase switching frequency and shrink passive components. An innovative DC link reduction technique is …
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GaN-based vertical power devices
Power electronics based on Gallium Nitride (GaN) is expected to significantly reduce the losses in power conversion circuits and increase the power density. This makes GaN devices very exciting candidates for next-generation power electronics, for the applications in electric vehicles, data …
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Overview and development of a wide bandgap, high temperature circuit and measurement solution
… bandgap materials, primarily gallium nitride (GaN) and silicon carbide (SiC), research has pushed toward high temperature power circuit operation to either reduce cooling system requirements or operate in high temperature environments due to their theoretically higher temperature capacity when …
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Thermally Hardened RF GaN HEMTs in Extreme Environments
… by the temperature performance of silicon devices (<250◦C). This area of high temperature (HT) electronics is an increasingly growing field with critical future applications in geothermal energy, space exploration, hypersonic aircraft, and deep gas/oil drilling, among others. Gallium …
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Gate Driver for Phase Leg of Parallel Enhancement-Mode Gallium-Nitride (GaN) Transistors
… rating and broader application, Gallium nitride (GaN) is a promising next-generation power switch. The current four GaN HEMTs in paralleled phase leg that can block 400 V and conduct 200 A current is very beneficial, thus making the protection method on a GaN phase leg an urgent topic. This thesis …
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Deeply-scaled GaN high electron mobility transistors for RF applications
… breakdown field and high electron velocity, GaN-based high electron mobility transistors (HEMTs) have great potential for next generation high power RF amplifiers. The performance of GaN devices has increased continuously in the last two decades. However, in spite of the improvements, there …
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Design and Optimization of Multichip GaN Module Enabling Improved Switching Performance
<p>Wide bandgap semiconductors (SiC & GaN) due to their enhanced performance and superior material properties compared to traditional silicon power devices have become the ultimate choice for future high-performance power electronics energy conversion. GaN high electron mobility transistor (HEMT) …
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High Frequency, High Power Density Integrated Point of Load and Bus Converters
… can reduce the voltage stress across the devices by a factor of two compared to the traditional buck; reducing switching losses, and allowing for the use of improved low voltage lateral and lateral trench devices. The three level can also significantly reduce the size of the inductor, …
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Optimization of LLC Resonant Converters: State-trajectory Control and PCB based Magnetics
… frequency up to MHz with gallium nitride (GaN) devices, the magnetics can be integrated into printed circuit board (PCB) windings. This dissertation proposes a novel matrix transformer structure and its design methodology. On the other hand, shielding technique can be employed to suppress …
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Novel Structures for Scalable Vertical Gallium Nitride Power Devices
Solid state electronic devices have been the backbone of modern power systems for decades. However, as we enter an era fuelled by renewable energy and defined by pervasive electrification, novel power devices must be developed to address the increasingly stringent demands for high power density and …
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