Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 2 of 2 for “"Fin-Field-Effect Transistors"”.
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High-resolution transmission electron microscopy of III-V FinFETs
… InGaAs n-channel metal-oxide-semiconductor field-effect transistors have already demonstrated promising characteristics, and the antimonide material system is emerging as a candidate for p-channel devices. As transistor technology scales down to the sub-10-nm regime, only devices with a 3D …
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Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications
… channel materials on the established cost-effective Si platform. Furthermore, dimensional scaling of the device has led to a change in architecture from the conventional planar MOSFET to be modified to a 3-D Tri-gate architecture which provides fully depleted characteristics by increasing …