Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 96 for “"AlN"”.
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Kinetics of hydration of AlN powder beds
Includes bibliographical references (pages 228-230).
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Structural and Morphological Analyses of Aln and Algan Layers
… dislocations originated at the interface between AlN epilayer and sapphire substrate is one of the major problems that needs to be effectively studied and overcome.</p> <p>A systematic analysis of various defects present in AlN layers grown on sapphire substrate as a part of deep-UV emitter …
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ALN/ALSCN Acoustic Resonant Systems Based on Ultra-Thin Piezoelectric Films
… aluminum nitride/aluminum scandium nitride (AlN/AlScN) based acoustic resonant systems. Various microelectromechanical system (MEMS) acoustic resonators — surface acoustic wave (SAW), thin-film bulk acoustic resonator (FBAR), and Lamb wave resonators— were investigated by employing the …
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Band Offset Measurements of ε-(InxGa1-x)2O3/AlN using X-ray Photoelectron Spectroscopy
… and high-power electronic devices, InGaO/AlN heterojunctions hold significant promise due to their ultra-wide band gap, tunable polarization properties, and optimized spectral response. In this regard, the ε-(In0.15Ga0.85)2O3 /AlN heterojunction has significant potential for …
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Toward Wireless Wearable Devices Based on Biocompatible AlN Piezoelectric Sensors for Multiple Biosignal Monitoring
L'abstract è presente nell'allegato / the abstract is in the attachment
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DC magnetron reactive sputtering of low stress AlN piezoelectric thin films for MEMS application
Microelectromechanical systems (MEMS) often incorporate piezoelectric thin films to actuate and detect motion of mechanical structures. Aluminum nitride is advantageous for MEMS use because it can be deposited at low temperatures, is easily patterned using conventional photolithographic techniques, …
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An Exploration of the Adequacy of Support for EAL and ALN Learners in Curriculum for Wales
… has yet been afforded to those EAL and ALN students who may not be part of the mainstream. When greater demands are placed on disadvantaged learners to become more independent, they could potentially become more ostracised as they may not be able to access learning without adequate …
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Aluminium nitride (AlN) as buffer layer for deposition of gallium nitride (GaN) thin films on silicon substrates using magnetron sputtering technique
… Indium nitride (InN), and aluminium nitride (AlN) had found use in broad technologies especially in optoelectronic and power devices. The main issues that limit the performance of GaN-based ultraviolet light-emitting diodes (UV-LEDs) are difficult to achieve highly crystalline GaN because lack …
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The Development and Characterisation of a Peptide Delivery Platform to Interrogate the Anticancer Effects of Bisphosphonates
… bisphosphonate (N BP), alendronate (ALN), into a novel anticancer therapeutic through complexation with the RALA peptide. N-BPs inhibit the prenylation of GTPase proteins, which are responsible for cell replication, morphology and signalling, to cause cell death through apoptosis. …
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Semiconductor electronic band alignment at heterojunctions of wurtzite aluminum nitride, gallium nitride, and indium nitride
… for wurtzite (0001) heterojunctions of AlN, GaN, and InN semiconductors are measured by x-ray photoemission spectroscopy. The bands alignments are all found to be Type I, and the valence-band discontinuities are found to be:(UNFORMATTED TABLE OR EQUATION …
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Reduced Defect Density Nalgan Template Layer for Improved Output Deep-UV LED
… upon which the device layers are grown. The AlN buffer layer, superlattice strain-relieving layer and nAlGaN layer are sequentially and systematically optimized. Rough/Smooth AlN layers are shown to yield the highest quality nAlGaN layers compared to Pulsed Lateral Overgrowth AlN or AlN grown …
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Dynamic measuring tools for online discourse
… within an Asynchronous Learning Network (ALN), current best practices include counting messages and reviewing participant surveys. To understand the impact of more advanced dynamic measurement tools for use within an ALN, a web-based tool, known as iPET (the integrated Participation …
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Substrate Impurity Incorporation Mitigation for Improved AlGaN/GaN-ON-Si RF Performance
… is formed between Silicon substrate and AlN nucleation layer during high-temperature deposition. This parasitic conduction path is highly detrimental as it is capacitively coupled to the GaN HEMT 2DEG channel. Moreover, the presence of significant lattice mismatch and thermal mismatch …
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Overcoming Longstanding Synthesis Challenges Toward Realizing the Full Device Potential of III-Nitride Semiconductors
… with a particular emphasis on InGaN, AlGaN, and AlN. The history of InGaN synthesis as it relates to phase separation is reviewed, and a revised definition of phase separation is proposed. The prior assumption of spinodal decomposition in III-nitrides is re-examined and found to be unlikely due …
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Investigations of the gallium nitride, aluminum nitride and indium nitride semiconductors: Structural, optical, electronic and interfacial properties
… of zincblende GaN and InN and wurtzite GaN, AlN and InN were studied by x-ray photoemission spectroscopy (XPS) in an effort to determine their valence band structure. We report the various energies of the valence band density of states maxima as well as the ionicity gaps of each material. …
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Automated library networking in American public community college Learning Resources Centers
… participation in automated library networking (ALN), to identify the factors which influenced or inhibited participation, to identify the benefits gained and the problems encountered due to participation, to identify the sources of funding for participation, to identify the involvement of LRCs …
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Superconducting nanowire single-photon detectors on aluminum nitride photonic integrated circuits
… various waveguide materials, aluminum nitride (AlN) is a promising candidate because of its exceptionally wide bandgap, and intrinsic piezoelectric and electro-optic properties. In this Master's thesis, we developed a complete fabrication process for making high-performance niobium nitride …
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Characterisation of polar (0001) and non-polar (11-20) ultraviolet nitride semiconductors
UV and deep-UV emitters based on AlGaN/AlN heterostructures are very inefficient due to the high lattice mismatch of these films with sapphire substrates, leading to high dislocation densities. This thesis describes the characterisation of the nanostructures of a range of UV structures, including …
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Design and fabrication of a prototype aluminum nitride-based pressure sensor with finite element analysis and validation
… pressure sensor based on Aluminum Nitride (AlN) Surface Acoustic Wave (SAW) and Shear Horizontal (SH)-SAW. This AlN-based device has unique superiority over other SAW devices, including relatively lower cost, higher sensitivity, intrinsically higher reliability, more compact size, and faster …
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Alendronate treatment elicits a reduction in fatigue-life of canine cortical bone
… after bisphosphonate treatment with alendronate (Aln). 1 1th ribs from 36 skeletally mature female beagles (1-2 years of age) treated daily with either a vehicle control (Cont, 1mL/kg saline) or Aln (0.2 or 1.0 mg/kg) for 3 years were evaluated. From both medial and lateral cortices, 1-6 cortical …
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