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Showing 1 to 20 of 118 for “"1/f"”.
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1/f noise in semiconductors and metals
The nature of 1/f noise in semiconductors and metals has been analyzed in light of the information provided by some unique, empirically determined parameters. Measurements of the instantaneous resistivity fluctuation isotropy, of the Hall noise magnitude and of the correlation between Hall noise …
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Surface 1/f Noise on Oxidized Silicon
Made available in DSpace on 2014-12-10T19:06:42Z (GMT). No. of bitstreams: 1 7121123.pdf: 4284772 bytes, checksum: 53c2955b8af153df7e9d4a691f71d0d8 (MD5) Previous issue date: 1971
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1/f surface noise in Mos transistors
Made available in DSpace on 2014-12-08T22:24:04Z (GMT). No. of bitstreams: 1 6706631.pdf: 2926893 bytes, checksum: 8233428a948c077c63135fb22d7a5b0e (MD5) Previous issue date: 1966
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1/f noise in semiconductors and metals
Properties of 1/f noise (low frequency resistance fluctuations) are analyzed using the results of a number of experiments, several of which are unique to our laboratory. Measurements of thermally activated noise spectral features, as well as the effect of a surface potential on the noise kinetics …
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1/f noise in semiconductors and metals
The nature of l/f noise in semiconductors and metals has been analyzed in light of the information provided by some unique, empirically determined parameters. Measurements of the instantaneous resistivity fluctuation isotropy, of the Hall noise magnitude and of the correlation between Hall noise …
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Probing Spin Glass Energy Landscapes with 1/f Noise
The spin-glass transition is a dynamical phase transition, similar in nature to that of structural glasses and other systems. Upon quenching from above the transition temperature Tg to a measurement temperature T < Tg, experiments and simulations have unveiled an underlying length scale, the …
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Universal conductance fluctuations, glassy kinetics, and 1/f noise
The 1/f noise in strongly disordered metallic CCu and SiAu systems was studied in the temperature range 2-300 K. The temperature, frequency, and electric and magnetic field dependencies were found to be consistent with the predictions of the universal conductance fluctuation theory in the low …
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Mechanical relaxations, spin glasses and 1/f resistance noise
Two experiments related to 1/f resistance noise will be described in this thesis. The first is measurements of the anelastic piezoresistance in thin films of bismuth, niobium and iron to demonstrate a connection between mechanical anelastic relaxations and electrical 1/f noise from the motion of …
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Universal conductance fluctuations, glassy kinetics, and 1/f noise
The 1/f noise in strongly disordered metallic CCu and SiAu systems was studied in the temperature range 2-300 K. The temperature, frequency, and electric and magnetic field dependencies were found to be consistent with the predictions of the universal conductance fluctuation theory in the low …
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Mechanical relaxations, spin glasses and 1/f resistance noise
Two experiments related to 1/f resistance noise will be described in this thesis. The first is measurements of the anelastic piezoresistance in thin films of bismuth, niobium and iron to demonstrate a connection between mechanical anelastic relaxations and electrical 1/f noise from the motion of …
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Renewal process and diffusion models of 1/f noise
Thesis (Sc.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1979.
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Multiscale state-space algorithms for processing 1/f signals
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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1/f noise and related surface effects in germanium
Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering, 1955.
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1/f noise in MOSFETs with ultrathin gate dielectrics
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 1992
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Design of a high speed 1/f noise test station
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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Measurement and analysis of 1/f noise in uncooled microbolometers
Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2000.
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On the 1/f noise of atomic-layer-deposition metal films
This thesis presents the measurement techniques and results of low-frequency noise for atomic-layer-deposition Pt films. Atomic-layer-deposition has been developed as an approach to make ultra-thin and conformal films. It has been employed to make detectors of bolometers. 1/f noise is a fundamental …
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Hydrogen concentration and temperature affect the 1/f resistance noise in niobium films
"The 1/f resistance fluctuations of thin Nb films was studied from 60 K to 400 K. The resistance noise came from hydrogen ions and other defects placed in the films during sputtering. Hydrogen ions cause three types of 1/f noise at different temperatures. The noise is related to internal friction …
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Hydrogen concentration and temperature affect the 1/f resistance noise in Nb films
"The 1 /f resistance fluctuations of thin Nb films was studied from 60 K to 400 K. The resistance noise came from hydrogen ions and other defects placed in the films during sputtering. Hydrogen ions cause three types of 1/f noise at different temperatures. The noise is related to internal friction …
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