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Virginia Tech

Fabrication and Characterization of Narrow-Stripe Quantum Well Laser Diodes

Abstract

dc:description.abstract

More efficient semiconductor lasers will be needed in tomorrow's applications. These lasers can only be realized through the application of new device processing techniques, designed to restrict current, carrier, and/or photon flow through the lasing cavity. This work aims to evaluate a non-conventional stripe laser processing technique which has the potential for effective current and possibly carrier confinement at low cost. This technique, referred to as hydrogen passivation, involves exposing laser material to a low energy hydrogen plasma, causing hydrogen ions to bind to charged acceptor and donor atoms. Such binding compensates the electrical activity of these dopant atoms and thereby increases the resistance of the exposed material. Optical confinement can also be achieved (subsequent to hydrogenation) by using a simple wet-etching process to form a lateral waveguide. Stripe lasers fabricated via hydrogen passivation have been demonstrated previously; however, the benefits of this method have not been fully explored or characterized. Our work aims to quantify the degree of current and carrier confinement provided by this technique. The cleaved cavity method of analysis is used to extract laser parameters via direct measurement. These parameters are then compared against those obtained from more conventional stripe lasers to identify improvements that have accrued from using hydrogen passivation.

Degree

thesis:*
Name thesis:degree_name
Master of Science
Level thesis:degree_level
masters
Discipline thesis:degree_discipline
Electrical and Computer Engineering
Department dc:contributor.department
Electrical and Computer Engineering
Grantor dc:publisher
Virginia Tech
Year dc:date.issued
2009

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Chern, Kevin Tsun-Jen
Chair dc:contributor.committeechair
  • Guido, Louis J.
Committee members dc:contributor.committeemember
  • Asryan, Levon V.
  • Lu, Guo-Quan
  • Hendricks, Robert W.

Subjects

dc:subject × 4

Rights

dc:rights
Statement dc:rights
  • In Copyright

Identifiers

dc:identifier.*
Dc Identifier Other
etd-08232010-154125
OAI identifier oai:identifier
oai:vtechworks.lib.vt.edu:10919/34717

Chain of custody

source
Harvested from
Virginia Tech
Base URL
vtechworks.lib.vt.edu/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Chern, Kevin Tsun-Jen. Fabrication and Characterization of Narrow-Stripe Quantum Well Laser Diodes. masters thesis, Virginia Tech, 2009. http://hdl.handle.net/10919/34717