{"id":{"repo_id":"vt","oai_identifier":"oai:vtechworks.lib.vt.edu:10919/34717"},"canonical_url":"https://search.dev.ndltd.org/etd/vt/oai:vtechworks.lib.vt.edu:10919/34717","repository":{"repo_id":"vt","name":"Virginia Tech","base_url":"https://vtechworks.lib.vt.edu/oai/request"},"display":{"title":"Fabrication and Characterization of Narrow-Stripe Quantum Well Laser Diodes","abstract":"More efficient semiconductor lasers will be needed in tomorrow's applications. These lasers can only be realized through the application of new device processing techniques, designed to restrict current, carrier, and/or photon flow through the lasing cavity. This work aims to evaluate a non-conventional stripe laser processing technique which has the potential for effective current and possibly carrier confinement at low cost. This technique, referred to as hydrogen passivation, involves exposing laser material to a low energy hydrogen plasma, causing hydrogen ions to bind to charged acceptor and donor atoms. Such binding compensates the electrical activity of these dopant atoms and thereby increases the resistance of the exposed material. Optical confinement can also be achieved (subsequent to hydrogenation) by using a simple wet-etching process to form a lateral waveguide. Stripe lasers fabricated via hydrogen passivation have been demonstrated previously; however, the benefits of this method have not been fully explored or characterized. Our work aims to quantify the degree of current and carrier confinement provided by this technique. The cleaved cavity method of analysis is used to extract laser parameters via direct measurement. These parameters are then compared against those obtained from more conventional stripe lasers to identify improvements that have accrued from using hydrogen passivation.","abstract_html":"More efficient semiconductor lasers will be needed in tomorrow's applications. These lasers can only be realized through the application of new device processing techniques, designed to restrict current, carrier, and/or photon flow through the lasing cavity. This work aims to evaluate a non-conventional stripe laser processing technique which has the potential for effective current and possibly carrier confinement at low cost. This technique, referred to as hydrogen passivation, involves exposing laser material to a low energy hydrogen plasma, causing hydrogen ions to bind to charged acceptor and donor atoms. Such binding compensates the electrical activity of these dopant atoms and thereby increases the resistance of the exposed material. Optical confinement can also be achieved (subsequent to hydrogenation) by using a simple wet-etching process to form a lateral waveguide. Stripe lasers fabricated via hydrogen passivation have been demonstrated previously; however, the benefits of this method have not been fully explored or characterized. Our work aims to quantify the degree of current and carrier confinement provided by this technique. The cleaved cavity method of analysis is used to extract laser parameters via direct measurement. These parameters are then compared against those obtained from more conventional stripe lasers to identify improvements that have accrued from using hydrogen passivation.","abstract_has_math":false,"creators":["Chern, Kevin Tsun-Jen"],"institution":"Virginia Tech","degree_name":"Master of Science","degree_level":"masters","degree_discipline":"Electrical and Computer Engineering","degree_department":"Electrical and Computer Engineering","school":null,"contributors":[],"advisors":[],"committee_chairs":["Guido, Louis J."],"committee_members":["Asryan, Levon V.","Lu, Guo-Quan","Hendricks, Robert W."],"year":2009,"date_issued":"2009-06-25","date_published":"2009-06-25","updated_at":"2026-07-22T22:19:19Z","subjects":["Quantum well laser","Optical gain","Device fabrication","Semiconductor laser"],"languages":[],"rights":["In Copyright"],"rights_urls":["http://rightsstatements.org/vocab/InC/1.0/"],"identifier_entries":[{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["etd-08232010-154125"],"render_values":[{"text":"etd-08232010-154125","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/10919/34717","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.committeechair","label":"Committee Chair","values":["Guido, Louis J."]},{"key":"dc:contributor.committeemember","label":"Committee Member","values":["Asryan, Levon V.","Lu, Guo-Quan","Hendricks, Robert W."]},{"key":"dc:contributor.department","label":"Department","values":["Electrical and Computer Engineering"]},{"key":"dc:creator","label":"Author","values":["Chern, Kevin Tsun-Jen"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2014-03-14T20:44:04Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2014-03-14T20:44:04Z","2010-09-17"]},{"key":"dc:date.issued","label":"Date","values":["2009-06-25"]},{"key":"dc:publisher","label":"Institution","values":["Virginia Tech"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Virginia Polytechnic Institute and State University"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Quantum well laser","Optical gain","Device fabrication","Semiconductor laser"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:rights","label":"Dc Rights","values":["In Copyright"]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://rightsstatements.org/vocab/InC/1.0/"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["etd-08232010-154125"]},{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/10919/34717"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["More efficient semiconductor lasers will be needed in tomorrow's applications. These lasers can only be realized through the application of new device processing techniques, designed to restrict current, carrier, and/or photon flow through the lasing cavity. This work aims to evaluate a non-conventional stripe laser processing technique which has the potential for effective current and possibly carrier confinement at low cost. This technique, referred to as hydrogen passivation, involves exposing laser material to a low energy hydrogen plasma, causing hydrogen ions to bind to charged acceptor and donor atoms. Such binding compensates the electrical activity of these dopant atoms and thereby increases the resistance of the exposed material. Optical confinement can also be achieved (subsequent to hydrogenation) by using a simple wet-etching process to form a lateral waveguide. Stripe lasers fabricated via hydrogen passivation have been demonstrated previously; however, the benefits of this method have not been fully explored or characterized. Our work aims to quantify the degree of current and carrier confinement provided by this technique. The cleaved cavity method of analysis is used to extract laser parameters via direct measurement. These parameters are then compared against those obtained from more conventional stripe lasers to identify improvements that have accrued from using hydrogen passivation."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Master of Science"]},{"key":"dc:title","label":"Title","values":["Fabrication and Characterization of Narrow-Stripe Quantum Well Laser Diodes"]}]}],"canonical_facts":{"dc:contributor.committeechair":["Guido, Louis J."],"dc:contributor.committeemember":["Asryan, Levon V.","Lu, Guo-Quan","Hendricks, Robert W."],"dc:contributor.department":["Electrical and Computer Engineering"],"dc:creator":["Chern, Kevin Tsun-Jen"],"dc:date.accessioned":["2014-03-14T20:44:04Z"],"dc:date.available":["2014-03-14T20:44:04Z","2010-09-17"],"dc:date.issued":["2009-06-25"],"dc:description.abstract":["More efficient semiconductor lasers will be needed in tomorrow's applications. These lasers can only be realized through the application of new device processing techniques, designed to restrict current, carrier, and/or photon flow through the lasing cavity. This work aims to evaluate a non-conventional stripe laser processing technique which has the potential for effective current and possibly carrier confinement at low cost. This technique, referred to as hydrogen passivation, involves exposing laser material to a low energy hydrogen plasma, causing hydrogen ions to bind to charged acceptor and donor atoms. Such binding compensates the electrical activity of these dopant atoms and thereby increases the resistance of the exposed material. Optical confinement can also be achieved (subsequent to hydrogenation) by using a simple wet-etching process to form a lateral waveguide. Stripe lasers fabricated via hydrogen passivation have been demonstrated previously; however, the benefits of this method have not been fully explored or characterized. Our work aims to quantify the degree of current and carrier confinement provided by this technique. The cleaved cavity method of analysis is used to extract laser parameters via direct measurement. These parameters are then compared against those obtained from more conventional stripe lasers to identify improvements that have accrued from using hydrogen passivation."],"dc:description.degree":["Master of Science"],"dc:identifier.other":["etd-08232010-154125"],"dc:identifier.uri":["http://hdl.handle.net/10919/34717"],"dc:publisher":["Virginia Tech"],"dc:rights":["In Copyright"],"dc:rights.uri":["http://rightsstatements.org/vocab/InC/1.0/"],"dc:subject":["Quantum well laser","Optical gain","Device fabrication","Semiconductor laser"],"dc:title":["Fabrication and Characterization of Narrow-Stripe Quantum Well Laser Diodes"],"dc:type":["Thesis"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_level":["masters"],"thesis:degree_name":["Master of Science"],"thesis:institution_name":["Virginia Polytechnic Institute and State University"]},"updated_at":"2026-07-22T22:19:19Z"}