High Quality ZnO Epitaxial Grown By Plasma Assisted Molecular Beam Epitaxy

Described in this thesis are the growth and characterization of high quality ZnO epitaxy layers.Zinc oxide (ZnO) epitaxy layers were grown on sapphire and epi-GaN substrates respectively, using plasma assisted molecular beam epitaxy (MBE) . Various growth conditions, such as growth temperature, II/VI ratio, and buffer layers, were employed to optimize the quality of the ZnO film. The subsequent characterization of the films was carried out to evaluate the surface, optical and crystalline properties of the film, using AFM, SEM, PL and XRD techniques. It was found out that the high quality of the ZnO film was grown on epi-GaN substrates under the Low temperature of ~ 300 degrees C, flash annealing up to ~680 degrees C, followed by high temperature growth at ~600 degrees C.

Name thesis:degree_name

Master of Science

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical Engineering

Year dc:date.available

2004

Author dc:creator

• Zhang, Yun

Contributors dc:contributor

• Dr. Hadis Morkoc

• EPITAXY
• MBE
• ZnO
• Electrical and Computer Engineering
• Engineering

Statement dc:rights

• © The Author

Identifier

https://scholarscompass.vcu.edu/etd/883

OAI identifier oai:identifier

oai:scholarscompass.vcu.edu:etd-1882