Growth and Characterization of Lattice-Mismatched In(x)ga(1-X)p Yellow Light Emitting Diodes on GaP

To demonstrate the feasibility of using a lattice-mismatched substrate, performance data of yellow LEDs using the step-graded buffer on a GaP substrate are given. These devices have an active region consisting of $\rm In\sb{0.3}Ga\sb{0.7}P$ that is in between an n-type, step-graded buffer and a top p-type contact. Because the GaP substrate is transparent to yellow light, LEDs deposited directly on these substrates can have up to two times greater efficiency than those deposited on absorbing substrates. After annealing, these devices operate at a wavelength of 5940 A at room temperature, but they exhibit lower than expected room temperature external quantum efficiencies. Reasons for these performance characteristics are studied and discussed.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Liu, Paul

Contributors dc:contributor

• Hsieh, Kuang-Chien

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI9737181

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/81192