{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81192"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81192","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Growth and Characterization of Lattice-Mismatched In(x)ga(1-X)p Yellow Light Emitting Diodes on GaP","abstract":"To demonstrate the feasibility of using a lattice-mismatched substrate, performance data of yellow LEDs using the step-graded buffer on a GaP substrate are given. These devices have an active region consisting of $\\rm In\\sb{0.3}Ga\\sb{0.7}P$ that is in between an n-type, step-graded buffer and a top p-type contact. Because the GaP substrate is transparent to yellow light, LEDs deposited directly on these substrates can have up to two times greater efficiency than those deposited on absorbing substrates. After annealing, these devices operate at a wavelength of 5940 A at room temperature, but they exhibit lower than expected room temperature external quantum efficiencies. Reasons for these performance characteristics are studied and discussed.","abstract_html":"To demonstrate the feasibility of using a lattice-mismatched substrate, performance data of yellow LEDs using the step-graded buffer on a GaP substrate are given. These devices have an active region consisting of $\\rm In\\sb{0.3}Ga\\sb{0.7}P$ that is in between an n-type, step-graded buffer and a top p-type contact. Because the GaP substrate is transparent to yellow light, LEDs deposited directly on these substrates can have up to two times greater efficiency than those deposited on absorbing substrates. After annealing, these devices operate at a wavelength of 5940 A at room temperature, but they exhibit lower than expected room temperature external quantum efficiencies. Reasons for these performance characteristics are studied and discussed.","abstract_has_math":true,"creators":["Liu, Paul"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Hsieh, Kuang-Chien"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:10:00Z","date_published":"2015-09-25T20:10:00Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9737181"],"render_values":[{"text":"(MiAaPQ)AAI9737181","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/81192","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Hsieh, Kuang-Chien"]},{"key":"dc:creator","label":"Author","values":["Liu, Paul"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:10:00Z","10000-01-01","1997"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/81192","(MiAaPQ)AAI9737181"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["To demonstrate the feasibility of using a lattice-mismatched substrate, performance data of yellow LEDs using the step-graded buffer on a GaP substrate are given. These devices have an active region consisting of $\\rm In\\sb{0.3}Ga\\sb{0.7}P$ that is in between an n-type, step-graded buffer and a top p-type contact. Because the GaP substrate is transparent to yellow light, LEDs deposited directly on these substrates can have up to two times greater efficiency than those deposited on absorbing substrates. After annealing, these devices operate at a wavelength of 5940 A at room temperature, but they exhibit lower than expected room temperature external quantum efficiencies. Reasons for these performance characteristics are studied and discussed.","Made available in DSpace on 2015-09-25T20:10:00Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9737181.pdf: 3182956 bytes, checksum: 63bdd46814282608c784aacee9b7d433 (MD5) Previous issue date: 1997","Embargo set by: Seth Robbins for item 82473 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","93 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997."]},{"key":"dc:title","label":"Title","values":["Growth and Characterization of Lattice-Mismatched In(x)ga(1-X)p Yellow Light Emitting Diodes on GaP"]}]}],"canonical_facts":{"dc:contributor":["Hsieh, Kuang-Chien"],"dc:creator":["Liu, Paul"],"dc:date":["2015-09-25T20:10:00Z","10000-01-01","1997"],"dc:description":["To demonstrate the feasibility of using a lattice-mismatched substrate, performance data of yellow LEDs using the step-graded buffer on a GaP substrate are given. These devices have an active region consisting of $\\rm In\\sb{0.3}Ga\\sb{0.7}P$ that is in between an n-type, step-graded buffer and a top p-type contact. Because the GaP substrate is transparent to yellow light, LEDs deposited directly on these substrates can have up to two times greater efficiency than those deposited on absorbing substrates. After annealing, these devices operate at a wavelength of 5940 A at room temperature, but they exhibit lower than expected room temperature external quantum efficiencies. Reasons for these performance characteristics are studied and discussed.","Made available in DSpace on 2015-09-25T20:10:00Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9737181.pdf: 3182956 bytes, checksum: 63bdd46814282608c784aacee9b7d433 (MD5) Previous issue date: 1997","Embargo set by: Seth Robbins for item 82473 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","93 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997."],"dc:identifier":["http://hdl.handle.net/2142/81192","(MiAaPQ)AAI9737181"],"dc:language":["eng"],"dc:subject":["Engineering, Materials Science"],"dc:title":["Growth and Characterization of Lattice-Mismatched In(x)ga(1-X)p Yellow Light Emitting Diodes on GaP"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:15Z"}