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University of Illinois at Urbana-Champaign
Low Temperature Photoluminescence Characterization of High Purity Gallium-Arsenide and Indium-Phosphide (Residual Impurities, Epitaxy)
Abstract
dc:descriptionThe analysis of low temperature photoluminescence (PL) spectra can be divided into three parts. First, the recombination processes responsible for each of the observed spectral peaks must be determined; second, the defects and impurities which participate in those processes must be identified; and finally, that information can be applied to study the incorporation of residual impurities and defects in various types of material. New results in each of these areas are presented for GaAs and InP.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2014
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Skromme, Brian John
Subjects
dc:subject × 1Identifiers
dc:identifier.*- Identifier
- (UMI)AAI8511675
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/69304