Low Temperature Photoluminescence Characterization of High Purity Gallium-Arsenide and Indium-Phosphide (Residual Impurities, Epitaxy)
The analysis of low temperature photoluminescence (PL) spectra can be divided into three parts. First, the recombination processes responsible for each of the observed spectral peaks must be determined; second, the defects and impurities which participate in those processes must be identified; and finally, that information can be applied to study the incorporation of residual impurities and defects in various types of material. New results in each of these areas are presented for GaAs and InP.
University of Illinois - Urbana-Champaign
Networked Digital Library of Theses and Dissertations
University of Illinois at Urbana-Champaign