Low Temperature Photoluminescence Characterization of High Purity Gallium-Arsenide and Indium-Phosphide (Residual Impurities, Epitaxy)
type: CreativeWork
description: The analysis of low temperature photoluminescence (PL) spectra can be divided into three parts. First, the recombination processes responsible for each of the observed spectral peaks must be determined; second, the defects and impurities which participate in those processes must be identified; and finally, that information can be applied to study the incorporation of residual impurities and defects in various types of material. New results in each of these areas are presented for GaAs and InP.
abstract: The analysis of low temperature photoluminescence (PL) spectra can be divided into three parts. First, the recombination processes responsible for each of the observed spectral peaks must be determined; second, the defects and impurities which participate in those processes must be identified; and finally, that information can be applied to study the incorporation of residual impurities and defects in various types of material. New results in each of these areas are presented for GaAs and InP.
author: Skromme, Brian John
keywords: Engineering, Electronics and Electrical
date published: 2014-12-15T19:04:54Z
date modified: 2026-07-22T22:26:00Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/69304