The characterization of aluminum gallium arsenide resonant tunneling diodes at microwave frequencies

Double-barrier, single-quantum-well, resonant tunneling diodes employing variable thickness Al$\sb{0.25}$Ga$\sb{0.75}$As barriers and 5 nm GaAs wells have been studied. Low doped GaAs buffer regions ($N\sb D$ $\approx$ 5 $\times$ 10$\sp{16}$ cm$\sp{-3}$) were placed next to the barriers to reduce the device capacitance and to prevent dopant migration into the barriers.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Gering, Joseph Michael

Contributors dc:contributor

• Coleman, Paul D.

• Engineering, Electronics and Electrical

Statement dc:rights

• Copyright 1991 Gering, Joseph Michael

Language dc:language

eng

Identifier

AAI9136598
(UMI)AAI9136598

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/22268