The characterization of aluminum gallium arsenide resonant tunneling diodes at microwave frequencies
Double-barrier, single-quantum-well, resonant tunneling diodes employing variable thickness Al$\sb{0.25}$Ga$\sb{0.75}$As barriers and 5 nm GaAs wells have been studied. Low doped GaAs buffer regions ($N\sb D$ $\approx$ 5 $\times$ 10$\sp{16}$ cm$\sp{-3}$) were placed next to the barriers to reduce the device capacitance and to prevent dopant migration into the barriers.
University of Illinois - Urbana-Champaign
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University of Illinois at Urbana-Champaign