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University of Illinois at Urbana-Champaign

Fabrication of novel semiconductor lasers grown by metalorganic chemical vapor deposition

Abstract

dc:description

This work describes novel fabrication processes and the advantages of metalorganic chemical vapor deposition (MOCVD) growth on nonplanar substrates which increase the maximum output power of semiconductor lasers when limited by catastrophic optical degradation (COD). Additionally, the characteristics and properties of high energy implantations are discussed as they relate to the fabrication of optoelectronic devices.

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Electrical Engineering
Grantor
University of Illinois at Urbana-Champaign
Date dc:date
10000-01-01

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Bryan, Robert Porter
Contributors dc:contributor
  • Coleman, James J.

Subjects

dc:subject × 2

Rights

dc:rights
Statement dc:rights
  • Copyright 1990 Bryan, Robert Porter
Language dc:language
eng

Identifiers

dc:identifier.*
Identifier
AAI9026148
(UMI)AAI9026148
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/21328

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Bryan, Robert Porter. Fabrication of novel semiconductor lasers grown by metalorganic chemical vapor deposition. Dissertation thesis, University of Illinois at Urbana-Champaign, http://hdl.handle.net/2142/21328