Studies of the growth of silicon and germanium overlayers: Surface, interface, and thin film formation

Surface reconstruction, atomic charge transfer, step formation, atomic structure and defects on the clean Si and Ge surfaces and the grown Si-on-Ge and Ge-on-Si overlayers were systematically studied. Adsorption mechanisms, surface species, chemical reactions, atomic composition and ordering, and film morphology during the growth using molecular beam epitaxy (MBE) and vapor phase epitaxy (VPE) were thoroughly investigated. In these studies, detailed atomistic descriptions of crystal growth by MBE and VPE were obtained by utilizing high resolution core-level photoemission with synchrotron radiation, electron diffraction, and scanning tunneling microscopy.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Lin, Deng-Sung

Contributors dc:contributor

• Chiang, Tai-Chang

• Physics, Condensed Matter
• Engineering, Materials Science

Statement dc:rights

• Copyright 1994 Lin, Deng-Sung

Language dc:language

eng

Identifier

AAI9503256
(UMI)AAI9503256

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/21268