Studies of the growth of silicon and germanium overlayers: Surface, interface, and thin film formation
type: CreativeWork
description: Surface reconstruction, atomic charge transfer, step formation, atomic structure and defects on the clean Si and Ge surfaces and the grown Si-on-Ge and Ge-on-Si overlayers were systematically studied. Adsorption mechanisms, surface species, chemical reactions, atomic composition and ordering, and film morphology during the growth using molecular beam epitaxy (MBE) and vapor phase epitaxy (VPE) were thoroughly investigated. In these studies, detailed atomistic descriptions of crystal growth by MBE and VPE were obtained by utilizing high resolution core-level photoemission with synchrotron radiation, electron diffraction, and scanning tunneling microscopy.
abstract: Surface reconstruction, atomic charge transfer, step formation, atomic structure and defects on the clean Si and Ge surfaces and the grown Si-on-Ge and Ge-on-Si overlayers were systematically studied. Adsorption mechanisms, surface species, chemical reactions, atomic composition and ordering, and film morphology during the growth using molecular beam epitaxy (MBE) and vapor phase epitaxy (VPE) were thoroughly investigated. In these studies, detailed atomistic descriptions of crystal growth by MBE and VPE were obtained by utilizing high resolution core-level photoemission with synchrotron radiation, electron diffraction, and scanning tunneling microscopy.
author: Lin, Deng-Sung
language: eng
keywords: Physics, Condensed Matter, Engineering, Materials Science
date published: 2011-05-07T13:03:38Z
date modified: 2026-07-22T22:25:17Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/21268