Lifetime Assessment and Real-Time Reliability Evaluation of SIC MOSFETs in Power Converters

The increasing adoption of Silicon Carbide (SiC) MOSFETs in modern power converters enables higher efficiency and faster switching but raises new challenges in reliability under thermal and electrical stresses. This thesis presents a comprehensive framework for assessing and enhancing the lifetime of semiconductor devices in hybrid converter topologies such as the Si/SiC H-ANPC inverter. Lifetime models are developed using Power Cycling Tests and a newly proposed Inverter-like Accelerated Test (IAT) that replicates real converter stresses. To ensure sustained reliability under varying operating conditions, a Reliability-Centric Control (RCC) strategy is introduced, which dynamically adjusts switching frequency, gate-drive voltage, and cooling to balance performance and lifetime. Experimental validation demonstrates significant lifetime improvements compared to conventional control. The developed modeling, testing, and control methodologies collectively advance the design of high-performance, long-lifetime SiC-based converters, supporting the next generation of reliable and efficient power electronic systems.

Author dc:creator

• Nanditha Ravindranath Gajanur (24399989)

• Power Electronics
• Reliability Engineering

Statement dc:rights

• In Copyright
• Open Access after 2028-05-01

DOI dc:identifier

https://doi.org/10.25417/uic.32995019.v1

OAI identifier oai:identifier

oai:figshare.com:article/32995019