{"id":{"repo_id":"uic","oai_identifier":"oai:figshare.com:article/32995019"},"canonical_url":"https://search.dev.ndltd.org/etd/uic/oai:figshare.com:article/32995019","repository":{"repo_id":"uic","name":"University of Illinois - Chicago","base_url":"https://api.figshare.com/v2/oai"},"display":{"title":"Lifetime Assessment and Real-Time Reliability Evaluation of SIC MOSFETs in Power Converters","abstract":"The increasing adoption of Silicon Carbide (SiC) MOSFETs in modern power converters enables higher efficiency and faster switching but raises new challenges in reliability under thermal and electrical stresses. This thesis presents a comprehensive framework for assessing and enhancing the lifetime of semiconductor devices in hybrid converter topologies such as the Si/SiC H-ANPC inverter. Lifetime models are developed using Power Cycling Tests and a newly proposed Inverter-like Accelerated Test (IAT) that replicates real converter stresses. To ensure sustained reliability under varying operating conditions, a Reliability-Centric Control (RCC) strategy is introduced, which dynamically adjusts switching frequency, gate-drive voltage, and cooling to balance performance and lifetime. Experimental validation demonstrates significant lifetime improvements compared to conventional control. The developed modeling, testing, and control methodologies collectively advance the design of high-performance, long-lifetime SiC-based converters, supporting the next generation of reliable and efficient power electronic systems.","abstract_html":"The increasing adoption of Silicon Carbide (SiC) MOSFETs in modern power converters enables higher efficiency and faster switching but raises new challenges in reliability under thermal and electrical stresses. This thesis presents a comprehensive framework for assessing and enhancing the lifetime of semiconductor devices in hybrid converter topologies such as the Si/SiC H-ANPC inverter. Lifetime models are developed using Power Cycling Tests and a newly proposed Inverter-like Accelerated Test (IAT) that replicates real converter stresses. To ensure sustained reliability under varying operating conditions, a Reliability-Centric Control (RCC) strategy is introduced, which dynamically adjusts switching frequency, gate-drive voltage, and cooling to balance performance and lifetime. Experimental validation demonstrates significant lifetime improvements compared to conventional control. The developed modeling, testing, and control methodologies collectively advance the design of high-performance, long-lifetime SiC-based converters, supporting the next generation of reliable and efficient power electronic systems.","abstract_has_math":false,"creators":["Nanditha Ravindranath Gajanur (24399989)"],"institution":null,"degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2026,"date_issued":"2026-05-01T00:00:00Z","date_published":"2026-05-01T00:00:00Z","updated_at":"2026-07-27T21:33:47Z","subjects":["Power Electronics","Reliability Engineering"],"languages":[],"rights":["In Copyright","Open Access after 2028-05-01"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://doi.org/10.25417/uic.32995019.v1","outbound_label":"DOI","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Nanditha Ravindranath Gajanur (24399989)"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2026-05-01T00:00:00Z"]},{"key":"dc:relation","label":"Dc Relation","values":["https://figshare.com/articles/thesis/Lifetime_Assessment_and_Real-Time_Reliability_Evaluation_of_SIC_MOSFETs_in_Power_Converters/32995019"]},{"key":"dc:type","label":"Dc Type","values":["Text","Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Power Electronics","Reliability Engineering"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:rights","label":"Dc Rights","values":["In Copyright","Open Access after 2028-05-01"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["10.25417/uic.32995019.v1"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The increasing adoption of Silicon Carbide (SiC) MOSFETs in modern power converters enables higher efficiency and faster switching but raises new challenges in reliability under thermal and electrical stresses. This thesis presents a comprehensive framework for assessing and enhancing the lifetime of semiconductor devices in hybrid converter topologies such as the Si/SiC H-ANPC inverter. Lifetime models are developed using Power Cycling Tests and a newly proposed Inverter-like Accelerated Test (IAT) that replicates real converter stresses. To ensure sustained reliability under varying operating conditions, a Reliability-Centric Control (RCC) strategy is introduced, which dynamically adjusts switching frequency, gate-drive voltage, and cooling to balance performance and lifetime. Experimental validation demonstrates significant lifetime improvements compared to conventional control. The developed modeling, testing, and control methodologies collectively advance the design of high-performance, long-lifetime SiC-based converters, supporting the next generation of reliable and efficient power electronic systems."]},{"key":"dc:title","label":"Title","values":["Lifetime Assessment and Real-Time Reliability Evaluation of SIC MOSFETs in Power Converters"]}]}],"canonical_facts":{"dc:creator":["Nanditha Ravindranath Gajanur (24399989)"],"dc:date":["2026-05-01T00:00:00Z"],"dc:description":["The increasing adoption of Silicon Carbide (SiC) MOSFETs in modern power converters enables higher efficiency and faster switching but raises new challenges in reliability under thermal and electrical stresses. This thesis presents a comprehensive framework for assessing and enhancing the lifetime of semiconductor devices in hybrid converter topologies such as the Si/SiC H-ANPC inverter. Lifetime models are developed using Power Cycling Tests and a newly proposed Inverter-like Accelerated Test (IAT) that replicates real converter stresses. To ensure sustained reliability under varying operating conditions, a Reliability-Centric Control (RCC) strategy is introduced, which dynamically adjusts switching frequency, gate-drive voltage, and cooling to balance performance and lifetime. Experimental validation demonstrates significant lifetime improvements compared to conventional control. The developed modeling, testing, and control methodologies collectively advance the design of high-performance, long-lifetime SiC-based converters, supporting the next generation of reliable and efficient power electronic systems."],"dc:identifier":["10.25417/uic.32995019.v1"],"dc:relation":["https://figshare.com/articles/thesis/Lifetime_Assessment_and_Real-Time_Reliability_Evaluation_of_SIC_MOSFETs_in_Power_Converters/32995019"],"dc:rights":["In Copyright","Open Access after 2028-05-01"],"dc:subject":["Power Electronics","Reliability Engineering"],"dc:title":["Lifetime Assessment and Real-Time Reliability Evaluation of SIC MOSFETs in Power Converters"],"dc:type":["Text","Thesis"]},"updated_at":"2026-07-27T21:33:47Z"}