The Effect Of Hot Carrier Stress On Low Noise Amplifier Radio Frequency Performance Under Weak And Strong Inversion

This thesis work is mainly focused on studying RF performance degradation of a low noise amplifier (LNA) circuit due to hot carrier effect (HCE) in both the weak and strong inversion regions. Since the figures of merit for the RF circuit characterization are gain, noise figure, input, and output matching, the LNA RF performance drift is evaluated in a Cadence SpectreRF simulator subject to these features. This thesis presents hot carrier induced degradation results of an LNA to show that the HCE phenomenon is one of the serious reliability issues in the aggressively scaled RF CMOS design, especially for long-term operation of these devices. The predicted degradation from simulation results can be used design reliable CMOS RF circuits.

Author dc:creator

• Shen, Lin

Contributors dc:contributor

• Yuan, Jiann S.

• radio frequency; low noise amplifier; hot carrier effect
• Electrical and Computer Engineering
• Electrical and Electronics
• Engineering

Language dc:language

English

Identifier

CFE0000952

OAI identifier oai:identifier

oai:stars.library.ucf.edu:etd-1842