{"id":{"repo_id":"ucf","oai_identifier":"oai:stars.library.ucf.edu:etd-1842"},"canonical_url":"https://search.dev.ndltd.org/etd/ucf/oai:stars.library.ucf.edu:etd-1842","repository":{"repo_id":"ucf","name":"Central Florida","base_url":"https://stars.library.ucf.edu/do/oai/"},"display":{"title":"The Effect Of Hot Carrier Stress On Low Noise Amplifier Radio Frequency Performance Under Weak And Strong Inversion","abstract":"This thesis work is mainly focused on studying RF performance degradation of a low noise amplifier (LNA) circuit due to hot carrier effect (HCE) in both the weak and strong inversion regions. Since the figures of merit for the RF circuit characterization are gain, noise figure, input, and output matching, the LNA RF performance drift is evaluated in a Cadence SpectreRF simulator subject to these features. This thesis presents hot carrier induced degradation results of an LNA to show that the HCE phenomenon is one of the serious reliability issues in the aggressively scaled RF CMOS design, especially for long-term operation of these devices. The predicted degradation from simulation results can be used design reliable CMOS RF circuits.","abstract_html":"This thesis work is mainly focused on studying RF performance degradation of a low noise amplifier (LNA) circuit due to hot carrier effect (HCE) in both the weak and strong inversion regions. Since the figures of merit for the RF circuit characterization are gain, noise figure, input, and output matching, the LNA RF performance drift is evaluated in a Cadence SpectreRF simulator subject to these features. This thesis presents hot carrier induced degradation results of an LNA to show that the HCE phenomenon is one of the serious reliability issues in the aggressively scaled RF CMOS design, especially for long-term operation of these devices. The predicted degradation from simulation results can be used design reliable CMOS RF circuits.","abstract_has_math":false,"creators":["Shen, Lin"],"institution":null,"degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":["Yuan, Jiann S."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2006,"date_issued":"2006-01-01T08:00:00Z","date_published":"2006-01-01T08:00:00Z","updated_at":"2026-07-24T05:09:25Z","subjects":["radio frequency; low noise amplifier; hot carrier effect","Electrical and Computer Engineering","Electrical and Electronics","Engineering"],"languages":["English"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["CFE0000952"],"render_values":[{"text":"CFE0000952","href":null,"code":true}]}]},"links":{"outbound_url":"https://stars.library.ucf.edu/etd/843","outbound_label":"Repository record","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Yuan, Jiann S."]},{"key":"dc:creator","label":"Author","values":["Shen, Lin"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:type","label":"Dc Type","values":["Masters Thesis (Open Access)"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["radio frequency; low noise amplifier; hot carrier effect","Electrical and Computer Engineering","Electrical and Electronics","Engineering"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["English"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["CFE0000952"]},{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://stars.library.ucf.edu/etd/843"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["<p>If this is your thesis or dissertation, and want to learn how to access it or for more information about readership statistics, contact us at <a href=\"mailto:STARS@ucf.edu\">STARS@ucf.edu</a></p>","Master of Science (M.S.)","College of Engineering and Computer Science","Electrical and Computer Engineering","Electrical Engineering"]},{"key":"dc:description.abstract","label":"Abstract","values":["This thesis work is mainly focused on studying RF performance degradation of a low noise amplifier (LNA) circuit due to hot carrier effect (HCE) in both the weak and strong inversion regions. Since the figures of merit for the RF circuit characterization are gain, noise figure, input, and output matching, the LNA RF performance drift is evaluated in a Cadence SpectreRF simulator subject to these features. This thesis presents hot carrier induced degradation results of an LNA to show that the HCE phenomenon is one of the serious reliability issues in the aggressively scaled RF CMOS design, especially for long-term operation of these devices. The predicted degradation from simulation results can be used design reliable CMOS RF circuits."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["The Effect Of Hot Carrier Stress On Low Noise Amplifier Radio Frequency Performance Under Weak And Strong Inversion"]}]}],"canonical_facts":{"dc:contributor":["Yuan, Jiann S."],"dc:creator":["Shen, Lin"],"dc:description":["<p>If this is your thesis or dissertation, and want to learn how to access it or for more information about readership statistics, contact us at <a href=\"mailto:STARS@ucf.edu\">STARS@ucf.edu</a></p>","Master of Science (M.S.)","College of Engineering and Computer Science","Electrical and Computer Engineering","Electrical Engineering"],"dc:description.abstract":["This thesis work is mainly focused on studying RF performance degradation of a low noise amplifier (LNA) circuit due to hot carrier effect (HCE) in both the weak and strong inversion regions. Since the figures of merit for the RF circuit characterization are gain, noise figure, input, and output matching, the LNA RF performance drift is evaluated in a Cadence SpectreRF simulator subject to these features. This thesis presents hot carrier induced degradation results of an LNA to show that the HCE phenomenon is one of the serious reliability issues in the aggressively scaled RF CMOS design, especially for long-term operation of these devices. The predicted degradation from simulation results can be used design reliable CMOS RF circuits."],"dc:format":["application/pdf"],"dc:identifier":["CFE0000952"],"dc:identifier.uri":["https://stars.library.ucf.edu/etd/843"],"dc:language":["English"],"dc:subject":["radio frequency; low noise amplifier; hot carrier effect","Electrical and Computer Engineering","Electrical and Electronics","Engineering"],"dc:title":["The Effect Of Hot Carrier Stress On Low Noise Amplifier Radio Frequency Performance Under Weak And Strong Inversion"],"dc:type":["Masters Thesis (Open Access)"]},"updated_at":"2026-07-24T05:09:25Z"}