Characterizing growth conditions in chlorine-activated diamond chemical vapor deposition

This research expands the current scope of understanding on the chemical and engineering phenomena underlying chlorine-activated chemical vapor deposition (CACVD) of thin diamond films. Numerical modelling at various levels of sophistication results in good trend and reasonable magnitude agreement between numerical and experimental data. Modelling suggests a low substrate temperature diamond growth mechanism by atomic carbon insertion reactions. Such a mechanism becomes pronounced at high atomic hydrogen concentrations and can lower the apparent growth activation energy in the low substrate temperature regime. Experiments using tubular substrates with opposing Ar/Cl and CH4/H2 flows produced a variety of results, from isolated crystals to large areas of continuous diamond film. Spatial micro-Raman spectroscopy analysis indicates a large difference in diamond quality depending on the operating conditions used. Experiments indicate a much smaller operating region for diamond growth than obtained using a previous design by Pan et al. [104]. Flat substrates with opposing flows produced better results than the tubular substrates.

Name thesis:degree_name

Doctor of Philosophy

Level thesis:degree_level

Doctoral

Discipline thesis:degree_discipline

Engineering

Grantor

Rice University

Year dc:date.issued

2000

Author dc:creator

• Joe, Raymond

Advisor dc:contributor.advisor

• Badgwell, Thomas A.

• Physical chemistry
• Chemical engineering
• Engineering
• Materials science

Statement dc:rights

• Copyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.

Language dc:language.iso

eng

Handle dc:identifier.uri

https://hdl.handle.net/1911/19517

OAI identifier oai:identifier

oai:repository.rice.edu:1911/19517