{"id":{"repo_id":"rice","oai_identifier":"oai:repository.rice.edu:1911/19517"},"canonical_url":"https://search.dev.ndltd.org/etd/rice/oai:repository.rice.edu:1911/19517","repository":{"repo_id":"rice","name":"Rice University","base_url":"https://repository.rice.edu/server/oai/request"},"display":{"title":"Characterizing growth conditions in chlorine-activated diamond chemical vapor deposition","abstract":"This research expands the current scope of understanding on the chemical and engineering phenomena underlying chlorine-activated chemical vapor deposition (CACVD) of thin diamond films. Numerical modelling at various levels of sophistication results in good trend and reasonable magnitude agreement between numerical and experimental data. Modelling suggests a low substrate temperature diamond growth mechanism by atomic carbon insertion reactions. Such a mechanism becomes pronounced at high atomic hydrogen concentrations and can lower the apparent growth activation energy in the low substrate temperature regime. Experiments using tubular substrates with opposing Ar/Cl and CH4/H2 flows produced a variety of results, from isolated crystals to large areas of continuous diamond film. Spatial micro-Raman spectroscopy analysis indicates a large difference in diamond quality depending on the operating conditions used. Experiments indicate a much smaller operating region for diamond growth than obtained using a previous design by Pan et al. [104]. Flat substrates with opposing flows produced better results than the tubular substrates.","abstract_html":"This research expands the current scope of understanding on the chemical and engineering phenomena underlying chlorine-activated chemical vapor deposition (CACVD) of thin diamond films. Numerical modelling at various levels of sophistication results in good trend and reasonable magnitude agreement between numerical and experimental data. Modelling suggests a low substrate temperature diamond growth mechanism by atomic carbon insertion reactions. Such a mechanism becomes pronounced at high atomic hydrogen concentrations and can lower the apparent growth activation energy in the low substrate temperature regime. Experiments using tubular substrates with opposing Ar/Cl and CH4/H2 flows produced a variety of results, from isolated crystals to large areas of continuous diamond film. Spatial micro-Raman spectroscopy analysis indicates a large difference in diamond quality depending on the operating conditions used. Experiments indicate a much smaller operating region for diamond growth than obtained using a previous design by Pan et al. [104]. Flat substrates with opposing flows produced better results than the tubular substrates.","abstract_has_math":false,"creators":["Joe, Raymond"],"institution":"Rice University","degree_name":"Doctor of Philosophy","degree_level":"Doctoral","degree_discipline":"Engineering","degree_department":null,"school":null,"contributors":[],"advisors":["Badgwell, Thomas A."],"committee_chairs":[],"committee_members":[],"year":2000,"date_issued":"2000","date_published":"2000","updated_at":"2026-07-24T04:10:37Z","subjects":["Physical chemistry","Chemical engineering","Engineering","Materials science"],"languages":["eng"],"rights":["Copyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder."],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/1911/19517","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Badgwell, Thomas A."]},{"key":"dc:creator","label":"Author","values":["Joe, Raymond"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2009-06-04T06:26:54Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2009-06-04T06:26:54Z"]},{"key":"dc:date.issued","label":"Date","values":["2000"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Doctoral"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Doctor of Philosophy"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Rice University"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physical chemistry","Chemical engineering","Engineering","Materials science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder."]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://hdl.handle.net/1911/19517"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["This research expands the current scope of understanding on the chemical and engineering phenomena underlying chlorine-activated chemical vapor deposition (CACVD) of thin diamond films. Numerical modelling at various levels of sophistication results in good trend and reasonable magnitude agreement between numerical and experimental data. Modelling suggests a low substrate temperature diamond growth mechanism by atomic carbon insertion reactions. Such a mechanism becomes pronounced at high atomic hydrogen concentrations and can lower the apparent growth activation energy in the low substrate temperature regime. Experiments using tubular substrates with opposing Ar/Cl and CH4/H2 flows produced a variety of results, from isolated crystals to large areas of continuous diamond film. Spatial micro-Raman spectroscopy analysis indicates a large difference in diamond quality depending on the operating conditions used. Experiments indicate a much smaller operating region for diamond growth than obtained using a previous design by Pan et al. [104]. Flat substrates with opposing flows produced better results than the tubular substrates."]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Characterizing growth conditions in chlorine-activated diamond chemical vapor deposition"]}]}],"canonical_facts":{"dc:contributor.advisor":["Badgwell, Thomas A."],"dc:creator":["Joe, Raymond"],"dc:date.accessioned":["2009-06-04T06:26:54Z"],"dc:date.available":["2009-06-04T06:26:54Z"],"dc:date.issued":["2000"],"dc:description.abstract":["This research expands the current scope of understanding on the chemical and engineering phenomena underlying chlorine-activated chemical vapor deposition (CACVD) of thin diamond films. Numerical modelling at various levels of sophistication results in good trend and reasonable magnitude agreement between numerical and experimental data. Modelling suggests a low substrate temperature diamond growth mechanism by atomic carbon insertion reactions. Such a mechanism becomes pronounced at high atomic hydrogen concentrations and can lower the apparent growth activation energy in the low substrate temperature regime. Experiments using tubular substrates with opposing Ar/Cl and CH4/H2 flows produced a variety of results, from isolated crystals to large areas of continuous diamond film. Spatial micro-Raman spectroscopy analysis indicates a large difference in diamond quality depending on the operating conditions used. Experiments indicate a much smaller operating region for diamond growth than obtained using a previous design by Pan et al. [104]. Flat substrates with opposing flows produced better results than the tubular substrates."],"dc:format.mimetype":["application/pdf"],"dc:identifier.uri":["https://hdl.handle.net/1911/19517"],"dc:language.iso":["eng"],"dc:rights":["Copyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder."],"dc:subject":["Physical chemistry","Chemical engineering","Engineering","Materials science"],"dc:title":["Characterizing growth conditions in chlorine-activated diamond chemical vapor deposition"],"dc:type":["Thesis"],"thesis:degree_discipline":["Engineering"],"thesis:degree_level":["Doctoral"],"thesis:degree_name":["Doctor of Philosophy"],"thesis:institution_name":["Rice University"]},"updated_at":"2026-07-24T04:10:37Z"}