Optical properties of SiGe nanostructures

In this thesis, Raman Scattering (RS) and photoluminescence (PL) measurements of Ge nanowires (NWs) grown via vapor-liquid-solid (VLS) using chemical vapor deposition silicon substrates consisting of (100) and (111) crystallographic orientations are reported. Ge NWs grown are ~40 nm in diameter, approximately a micrometer in length, and a sharp narrow Raman peak at ~300cm^{-1} indicates single crystal quality. An absence of SiGe peak in the Raman spectra indicates that SiGe interdiffusion is insignificant for the NW volume. Low temperature PL-intensity-dependence spectra indicate that the observed emission originates at the Ge NW - Si substrate interface, where SiGe intermixing has been detected. This interface is formed differently for (111) and (100) oriented Si substrates due to the <111> preferential growth direction of Ge NWs.

Name thesis:degree_name

Master of Science in Electrical Engineering - (M.S.)

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Year

2005

Author dc:creator

• Sharma, Varun

Contributors dc:contributor

• Leonid Tsybeskov
• Haim Grebel
• Marek Sosnowski

• Raman Scattering
• photoluminescence
• Electrical and Electronics

Repository record dc:identifier

https://digitalcommons.njit.edu/theses/468

OAI identifier oai:identifier

oai:digitalcommons.njit.edu:theses-1467