{"id":{"repo_id":"njit","oai_identifier":"oai:digitalcommons.njit.edu:theses-1467"},"canonical_url":"https://search.dev.ndltd.org/etd/njit/oai:digitalcommons.njit.edu:theses-1467","repository":{"repo_id":"njit","name":"NJIT","base_url":"https://digitalcommons.njit.edu/do/oai/"},"display":{"title":"Optical properties of SiGe nanostructures","abstract":"In this thesis, Raman Scattering (RS) and photoluminescence (PL) measurements of Ge nanowires (NWs) grown via vapor-liquid-solid (VLS) using chemical vapor deposition silicon substrates consisting of (100) and (111) crystallographic orientations are reported. Ge NWs grown are ~40 nm in diameter, approximately a micrometer in length, and a sharp narrow Raman peak at ~300cm^{-1} indicates single crystal quality. An absence of SiGe peak in the Raman spectra indicates that SiGe interdiffusion is insignificant for the NW volume. Low temperature PL-intensity-dependence spectra indicate that the observed emission originates at the Ge NW - Si substrate interface, where SiGe intermixing has been detected. This interface is formed differently for (111) and (100) oriented Si substrates due to the <111> preferential growth direction of Ge NWs.","abstract_html":"In this thesis, Raman Scattering (RS) and photoluminescence (PL) measurements of Ge nanowires (NWs) grown via vapor-liquid-solid (VLS) using chemical vapor deposition silicon substrates consisting of (100) and (111) crystallographic orientations are reported. Ge NWs grown are ~40 nm in diameter, approximately a micrometer in length, and a sharp narrow Raman peak at ~300cm^{-1} indicates single crystal quality. An absence of SiGe peak in the Raman spectra indicates that SiGe interdiffusion is insignificant for the NW volume. Low temperature PL-intensity-dependence spectra indicate that the observed emission originates at the Ge NW - Si substrate interface, where SiGe intermixing has been detected. This interface is formed differently for (111) and (100) oriented Si substrates due to the &lt;111&gt; preferential growth direction of Ge NWs.","abstract_has_math":false,"creators":["Sharma, Varun"],"institution":null,"degree_name":"Master of Science in Electrical Engineering - (M.S.)","degree_level":null,"degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Leonid Tsybeskov","Haim Grebel","Marek Sosnowski"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2005,"date_issued":"2005-01-31T08:00:00Z","date_published":"2005-01-31T08:00:00Z","updated_at":"2026-07-24T03:23:27Z","subjects":["Raman Scattering","photoluminescence","Electrical and Electronics"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://digitalcommons.njit.edu/theses/468","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Leonid Tsybeskov","Haim Grebel","Marek Sosnowski"]},{"key":"dc:creator","label":"Author","values":["Sharma, Varun"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science in Electrical Engineering - (M.S.)"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Raman Scattering","photoluminescence","Electrical and Electronics"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://digitalcommons.njit.edu/theses/468"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["In this thesis, Raman Scattering (RS) and photoluminescence (PL) measurements of Ge nanowires (NWs) grown via vapor-liquid-solid (VLS) using chemical vapor deposition silicon substrates consisting of (100) and (111) crystallographic orientations are reported. Ge NWs grown are ~40 nm in diameter, approximately a micrometer in length, and a sharp narrow Raman peak at ~300cm^{-1} indicates single crystal quality. An absence of SiGe peak in the Raman spectra indicates that SiGe interdiffusion is insignificant for the NW volume. Low temperature PL-intensity-dependence spectra indicate that the observed emission originates at the Ge NW - Si substrate interface, where SiGe intermixing has been detected. This interface is formed differently for (111) and (100) oriented Si substrates due to the <111> preferential growth direction of Ge NWs."]},{"key":"dc:title","label":"Title","values":["Optical properties of SiGe nanostructures"]}]}],"canonical_facts":{"dc:contributor":["Leonid Tsybeskov","Haim Grebel","Marek Sosnowski"],"dc:creator":["Sharma, Varun"],"dc:description.abstract":["In this thesis, Raman Scattering (RS) and photoluminescence (PL) measurements of Ge nanowires (NWs) grown via vapor-liquid-solid (VLS) using chemical vapor deposition silicon substrates consisting of (100) and (111) crystallographic orientations are reported. Ge NWs grown are ~40 nm in diameter, approximately a micrometer in length, and a sharp narrow Raman peak at ~300cm^{-1} indicates single crystal quality. An absence of SiGe peak in the Raman spectra indicates that SiGe interdiffusion is insignificant for the NW volume. Low temperature PL-intensity-dependence spectra indicate that the observed emission originates at the Ge NW - Si substrate interface, where SiGe intermixing has been detected. This interface is formed differently for (111) and (100) oriented Si substrates due to the <111> preferential growth direction of Ge NWs."],"dc:identifier":["https://digitalcommons.njit.edu/theses/468"],"dc:subject":["Raman Scattering","photoluminescence","Electrical and Electronics"],"dc:title":["Optical properties of SiGe nanostructures"],"dc:type":["Thesis"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_name":["Master of Science in Electrical Engineering - (M.S.)"]},"updated_at":"2026-07-24T03:23:27Z"}