Characterization of heat-treated nickel and gold films on silicon single crystals

<p>"An experimental electron impact ionization source was used to determine the presence of various neutral atoms and molecules on metallized and bare surfaces of silicon wafers. The metallization consisted of thin films of nicke l and gold separately and in combination. The major surface contaminates on all samples were found to be F, Na, Cl, K, CO, and CO₂. The surface concentration of these species was found to be sensitive to the sample temperature up to 550 °C, the maximum temperature used in this study.</p> <p>In the course of the mass spectrometric study, it was found that crystallites were formed on samples coated with nickel and gold films in combination. Several experimental methods were used to study these crystallites and to determine their origin. These methods included x-ray diffraction, scanning electron microscopy, and in-depth Auger electron spectroscopy. The crystallites were identified as NiSi₂.</p> <p>Diffusion appeared to be important to the formation of the NiSi₂. Therefore, in-depth Auger electron spectroscopy was used to study the diffusion kinetics of nickel in silicon. The activation energy for diffusion of nickel in silicon was found to be 38 kcal mole^-1, in the temperature range of 250 to 350 °C"-- Abstract, pp. ii-iii</p>

Name thesis:degree_name

Ph. D. in Ceramic Engineering

Grantor

University of Missouri--Rolla

Year dc:date.available

2016

Author dc:creator

• Yoon, Ki Hyun

• Ceramic Materials

Repository record dc:identifier

https://scholarsmine.mst.edu/doctoral_dissertations/263

OAI identifier oai:identifier

oai:scholarsmine.mst.edu:doctoral_dissertations-1265