\"An experimental electron impact ionization source was used to determine the presence of various neutral atoms and molecules on metallized and bare surfaces of silicon wafers. The metallization consisted of thin films of nicke l and gold separately and in combination. The major surface contaminates on all samples were found to be F, Na, Cl, K, CO, and CO2. The surface concentration of these species was found to be sensitive to the sample temperature up to 550 °C, the maximum temperature used in this study.
In the course of the mass spectrometric study, it was found that crystallites were formed on samples coated with nickel and gold films in combination. Several experimental methods were used to study these crystallites and to determine their origin. These methods included x-ray diffraction, scanning electron microscopy, and in-depth Auger electron spectroscopy. The crystallites were identified as NiSi2.
Diffusion appeared to be important to the formation of the NiSi2. Therefore, in-depth Auger electron spectroscopy was used to study the diffusion kinetics of nickel in silicon. The activation energy for diffusion of nickel in silicon was found to be 38 kcal mole-1, in the temperature range of 250 to 350 °C\"-- Abstract, pp. ii-iii
","abstract_html":"<p>"An experimental electron impact ionization source was used to determine the presence of various neutral atoms and molecules on metallized and bare surfaces of silicon wafers. The metallization consisted of thin films of nicke l and gold separately and in combination. The major surface contaminates on all samples were found to be F, Na, Cl, K, CO, and CO<sub>2</sub>. The surface concentration of these species was found to be sensitive to the sample temperature up to 550 °C, the maximum temperature used in this study.</p> <p>In the course of the mass spectrometric study, it was found that crystallites were formed on samples coated with nickel and gold films in combination. Several experimental methods were used to study these crystallites and to determine their origin. These methods included x-ray diffraction, scanning electron microscopy, and in-depth Auger electron spectroscopy. The crystallites were identified as NiSi<sub>2</sub>.</p> <p>Diffusion appeared to be important to the formation of the NiSi<sub>2</sub>. Therefore, in-depth Auger electron spectroscopy was used to study the diffusion kinetics of nickel in silicon. The activation energy for diffusion of nickel in silicon was found to be 38 kcal mole<sup>-1</sup>, in the temperature range of 250 to 350 °C"-- Abstract, pp. ii-iii</p>","abstract_has_math":false,"creators":["Yoon, Ki Hyun"],"institution":"University of Missouri--Rolla","degree_name":"Ph. D. in Ceramic Engineering","degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2016,"date_issued":"2016-02-10T08:00:00Z","date_published":"2016-02-10T08:00:00Z","updated_at":"2026-07-24T03:18:43Z","subjects":["Ceramic Materials"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://scholarsmine.mst.edu/doctoral_dissertations/263","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Yoon, Ki Hyun"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.available","label":"Dc Date Available","values":["2016-02-10T08:00:00Z"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation - Open Access"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph. D. in Ceramic Engineering"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Missouri--Rolla"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Ceramic Materials"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://scholarsmine.mst.edu/doctoral_dissertations/263"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["\"An experimental electron impact ionization source was used to determine the presence of various neutral atoms and molecules on metallized and bare surfaces of silicon wafers. The metallization consisted of thin films of nicke l and gold separately and in combination. The major surface contaminates on all samples were found to be F, Na, Cl, K, CO, and CO2. The surface concentration of these species was found to be sensitive to the sample temperature up to 550 °C, the maximum temperature used in this study.
In the course of the mass spectrometric study, it was found that crystallites were formed on samples coated with nickel and gold films in combination. Several experimental methods were used to study these crystallites and to determine their origin. These methods included x-ray diffraction, scanning electron microscopy, and in-depth Auger electron spectroscopy. The crystallites were identified as NiSi2.
Diffusion appeared to be important to the formation of the NiSi2. Therefore, in-depth Auger electron spectroscopy was used to study the diffusion kinetics of nickel in silicon. The activation energy for diffusion of nickel in silicon was found to be 38 kcal mole-1, in the temperature range of 250 to 350 °C\"-- Abstract, pp. ii-iii
"]},{"key":"dc:title","label":"Title","values":["Characterization of heat-treated nickel and gold films on silicon single crystals"]}]}],"canonical_facts":{"dc:creator":["Yoon, Ki Hyun"],"dc:date.available":["2016-02-10T08:00:00Z"],"dc:description.abstract":["\"An experimental electron impact ionization source was used to determine the presence of various neutral atoms and molecules on metallized and bare surfaces of silicon wafers. The metallization consisted of thin films of nicke l and gold separately and in combination. The major surface contaminates on all samples were found to be F, Na, Cl, K, CO, and CO2. The surface concentration of these species was found to be sensitive to the sample temperature up to 550 °C, the maximum temperature used in this study.
In the course of the mass spectrometric study, it was found that crystallites were formed on samples coated with nickel and gold films in combination. Several experimental methods were used to study these crystallites and to determine their origin. These methods included x-ray diffraction, scanning electron microscopy, and in-depth Auger electron spectroscopy. The crystallites were identified as NiSi2.
Diffusion appeared to be important to the formation of the NiSi2. Therefore, in-depth Auger electron spectroscopy was used to study the diffusion kinetics of nickel in silicon. The activation energy for diffusion of nickel in silicon was found to be 38 kcal mole-1, in the temperature range of 250 to 350 °C\"-- Abstract, pp. ii-iii
"],"dc:identifier":["https://scholarsmine.mst.edu/doctoral_dissertations/263"],"dc:subject":["Ceramic Materials"],"dc:title":["Characterization of heat-treated nickel and gold films on silicon single crystals"],"dc:type":["Dissertation - Open Access"],"thesis:degree_name":["Ph. D. in Ceramic Engineering"],"thesis:institution_name":["University of Missouri--Rolla"]},"updated_at":"2026-07-24T03:18:43Z"}