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Missouri State University

Van Der Pauw Hall Effect and Resistivity Characterization of Gan Thin Films

Abstract

dc:description.abstract

The van der Pauw Hall Effect and Resistivity measurement procedure is the most popular method used for determining the electrical properties of a semiconductor. With this method it is possible to tell what carrier types are present in a thin film, and what their concentrations and mobilities are. This will, in the end, help the researcher know how best to grow semiconductor thin films with certain desired electrical properties. In this thesis, a newly refurbished system is described, and results from subsequent experiments are offered. These results demonstrate the expected temperature dependencies of the electrical properties of GaN thin films, and serve as an indication for future research directions.

Degree

thesis:*
Name thesis:degree_name
Master of Science in Materials Science
Level thesis:degree_level
Masters
Discipline thesis:degree_discipline
Physics, Astronomy, and Materials Science
Year
2000

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Porter, Hugh
Contributors dc:contributor
  • Shyang Hwang

Subjects

dc:subject × 1

Rights

dc:rights
Statement dc:rights
  • © Hugh Porter

Identifiers

dc:identifier.*
Repository record dc:identifier
https://bearworks.missouristate.edu/theses/837
OAI identifier oai:identifier
oai:bearworks.missouristate.edu:theses-1838

Chain of custody

source
Harvested from
Missouri State University
Base URL
bearworks.missouristate.edu/do/oai/
Last updated
2026-07-24
Source record
OAI-PMH GetRecord
citation

Porter, Hugh. Van Der Pauw Hall Effect and Resistivity Characterization of Gan Thin Films. Masters thesis, 2000. https://bearworks.missouristate.edu/theses/837