Untersuchung der Relaxation elastischer Spannungen durch Helium-Implantation und thermische Behandlung in Si 1-x Ge x / Si-Heterostrukturen

The present work is investigating the relaxation of elastic stresses in Si1-xGex/Si-heterostructures after helium implantation and thermal annealing. Particular attention is directed onto the interplay of helium diffusion and the nucleation and movement of dislocation loops leading to the relaxation of elastic stresses.Various methods based on ion scattering as well as transmission electron microscopy have been utilised for the investigations. The experiments have been performed on CVD grown pseudomorphic Si1-xGex layers with thicknesses between 100 nm and 200 nm and germanium contents between 20 at% and 27 at%. Within the Implantation step Helium ions with doses in an order of 10^16 cm^-2 were chosen. The implantation energy was adopted to the heterostructure resulting into an Implantation depth corresponding to twice the layer thickness.

Grantor dc:publisher

Publikationsserver der RWTH Aachen University

Year dc:date

2006

Author dc:creator

• Hüging, Norbert

Contributors dc:contributor

• Urban, Knut

• info:eu-repo/classification/ddc/530
• Physik
• Helium
• Dünne Schicht
• Silicium
• Germanium
• Heterostruktur
• Spannungsrelaxation
• Heliumdichte
• Versetzungsnukleation
• elastische Spannungen
• thermische Behandlung

Statement dc:rights

• info:eu-repo/semantics/openAccess

Language dc:language

ger

Identifier

https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-122733%22

OAI identifier oai:identifier

oai:publications.rwth-aachen.de:61049